SIHG73

SIHG73N60AEL-GE3 vs SIHG73N60AE-GE3 vs SIHG73N60E-E3

 
PartNumberSIHG73N60AEL-GE3SIHG73N60AE-GE3SIHG73N60E-E3
DescriptionMOSFET 600V Vds 30V Vgs TO-247ACMOSFET 600V Vds 30V Vgs TO-247ACMOSFET 600V Vds 30V Vgs TO-247AC
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247AC-3TO-247AC-3TO-247AC-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current69 A60 A73 A
Rds On Drain Source Resistance42 mOhms35 mOhms39 mOhms
Vgs th Gate Source Threshold Voltage2 V4 V4 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge342 nC394 nC241 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation520 W417 W520 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
SeriesELEE
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min28 S22 S-
Fall Time104 ns114 ns120 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time80 ns96 ns105 ns
Factory Pack Quantity1-500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time244 ns212 ns290 ns
Typical Turn On Delay Time51 ns43 ns63 ns
Packaging--Bulk
Unit Weight--1.340411 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHG73N60AEL-GE3 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG73N60AE-GE3 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG73N60E-GE3 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG73N60E-E3 MOSFET 600V Vds 30V Vgs TO-247AC
Vishay
Vishay
SIHG73N60E-E3 RF Bipolar Transistors MOSFET 600 Volts 73 Amps 520 Watts
SIHG73N60AEL-GE3 MOSFET N-CHAN 600V TO-247AC
SIHG73N60E-GE3 MOSFET N-CH 600V 73A TO247AC
SIHG73N60AE-GE3 MOSFET N-CH 600V 60A TO247AC
SIHG73N60E New and Original
SIHG73N60E-GE3,SIHG73N60 New and Original
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