SIHG73N60E

SIHG73N60E-GE3 vs SIHG73N60E-E3

 
PartNumberSIHG73N60E-GE3SIHG73N60E-E3
DescriptionMOSFET 600V Vds 30V Vgs TO-247ACMOSFET 600V Vds 30V Vgs TO-247AC
ManufacturerVishayVishay
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-247AC-3TO-247AC-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current73 A73 A
Rds On Drain Source Resistance39 mOhms39 mOhms
Vgs th Gate Source Threshold Voltage4 V4 V
Vgs Gate Source Voltage30 V30 V
Qg Gate Charge241 nC241 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation520 W520 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingTubeBulk
Height20.82 mm-
Length15.87 mm-
SeriesEE
Width5.31 mm-
BrandVishay / SiliconixVishay / Siliconix
Fall Time120 ns120 ns
Product TypeMOSFETMOSFET
Rise Time105 ns105 ns
Factory Pack Quantity500500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time290 ns290 ns
Typical Turn On Delay Time63 ns63 ns
Unit Weight1.340411 oz1.340411 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHG73N60E-GE3 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG73N60E-E3 MOSFET 600V Vds 30V Vgs TO-247AC
Vishay
Vishay
SIHG73N60E-E3 RF Bipolar Transistors MOSFET 600 Volts 73 Amps 520 Watts
SIHG73N60E-GE3 MOSFET N-CH 600V 73A TO247AC
SIHG73N60E New and Original
SIHG73N60E-GE3,SIHG73N60 New and Original
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