SIHH11N

SIHH11N60E-T1-GE3 vs SIHH11N60EF-T1-GE3 vs SIHH11N65E-T1-GE3

 
PartNumberSIHH11N60E-T1-GE3SIHH11N60EF-T1-GE3SIHH11N65E-T1-GE3
DescriptionMOSFET 600V Vds 30V Vgs PowerPAK 8 x 8MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-8x8-4PowerPAK-8x8-4PowerPAK-8x8-4
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage600 V-650 V
Id Continuous Drain Current11 A-12 A
Rds On Drain Source Resistance295 mOhms-316 mOhms
Vgs th Gate Source Threshold Voltage4 V-4 V
Vgs Gate Source Voltage30 V-30 V
Qg Gate Charge31 nC-34 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation114 W-130 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
Height1 mm1 mm1 mm
Length8 mm8 mm8 mm
SeriesEEFE
Width8 mm8 mm8 mm
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time21 ns-23 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time21 ns-28 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time39 ns-39 ns
Typical Turn On Delay Time16 ns-19 ns
Unit Weight-0.001764 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHH11N60E-T1-GE3 MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
SIHH11N60EF-T1-GE3 MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
SIHH11N65E-T1-GE3 MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
SIHH11N65EF-T1-GE3 MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
Vishay
Vishay
SIHH11N60E-T1-GE3 MOSFET N-CH 600V 11A POWERPAK8X8
SIHH11N60EF-T1-GE3 MOSFET N-CH 600V 11A POWERPAK8X8
SIHH11N65E-T1-GE3 Trans MOSFET N-CH 650V 12A 4-Pin PowerPAK EP T/R
SIHH11N65EF-T1-GE3 MOSFET N-CHAN 600V 24A POWERPAK
SIHH11N65E New and Original
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