PartNumber | SIHH11N60E-T1-GE3 | SIHH11N60EF-T1-GE3 | SIHH11N65E-T1-GE3 |
Description | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-8x8-4 | PowerPAK-8x8-4 | PowerPAK-8x8-4 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | - | 650 V |
Id Continuous Drain Current | 11 A | - | 12 A |
Rds On Drain Source Resistance | 295 mOhms | - | 316 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | - | 4 V |
Vgs Gate Source Voltage | 30 V | - | 30 V |
Qg Gate Charge | 31 nC | - | 34 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 114 W | - | 130 W |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 1 mm | 1 mm | 1 mm |
Length | 8 mm | 8 mm | 8 mm |
Series | E | EF | E |
Width | 8 mm | 8 mm | 8 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 21 ns | - | 23 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 21 ns | - | 28 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 39 ns | - | 39 ns |
Typical Turn On Delay Time | 16 ns | - | 19 ns |
Unit Weight | - | 0.001764 oz | - |