SIHH14

SIHH14N60E-T1-GE3 vs SIHH14N65E-T1-GE3 vs SIHH14N60EF-T1-GE3

 
PartNumberSIHH14N60E-T1-GE3SIHH14N65E-T1-GE3SIHH14N60EF-T1-GE3
DescriptionMOSFET 600V Vds 30V Vgs PowerPAK 8 x 8MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-8x8-4PowerPAK-8x8-4PowerPAK-8x8-4
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V650 V600 V
Id Continuous Drain Current16 A15 A16 A
Rds On Drain Source Resistance220 mOhms225 mOhms220 mOhms
Vgs th Gate Source Threshold Voltage4 V4 V4 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge41 nC48 nC41 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation147 W156 W147 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Height1 mm1 mm-
Length8 mm8 mm-
SeriesEEFE
Width8 mm8 mm-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time31 ns31 ns31 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time21 ns30 ns21 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time56 ns53 ns56 ns
Typical Turn On Delay Time16 ns22 ns16 ns
Unit Weight-0.001764 oz0.001764 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHH14N60E-T1-GE3 MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
SIHH14N65E-T1-GE3 MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
SIHH14N60EF-T1-GE3 MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
SIHH14N65EF-T1-GE3 MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
Vishay
Vishay
SIHH14N60EF-T1-GE3 MOSFET N-CH 600V 15A POWERPAK8X8
SIHH14N60E-T1-GE3 MOSFET N-CH 600V 16A POWERPAK8X8
SIHH14N65EF-T1-GE3 MOSFET N-CHAN 650V 15A POWERPAK
SIHH14N65E-T1-GE3 Trans MOSFET N-CH 650V 15A 4-Pin PowerPAK EP T/R
SIHH14N65EF New and Original
SIHH14N65ET1GE3 Power Field-Effect Transistor, 15A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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