PartNumber | SIHP12N50C-E3 | SIHP125N60EF-GE3 | SIHP120N60E-GE3 |
Description | MOSFET N-Channel 500V | MOSFET EF Series Power MOSFET With Fast Body Diode | MOSFET 650V Vds; 30V Vgs TO-220AB |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | SMD/SMT | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 600 V | 600 V |
Id Continuous Drain Current | 12 A | 25 A | 25 A |
Rds On Drain Source Resistance | 555 mOhms | 109 mOhms | 120 mOhms |
Vgs th Gate Source Threshold Voltage | 5 V | 5 V | 3 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 32 nC | 31 nC | 45 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 208 W | - | 179 W |
Configuration | Single | - | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | - | Tube |
Height | 15.49 mm | - | - |
Length | 10.41 mm | - | - |
Width | 4.7 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 6 ns | 20 ns | 33 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 35 ns | 33 ns | 65 ns |
Factory Pack Quantity | 50 | - | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 23 ns | 33 ns | 31 ns |
Typical Turn On Delay Time | 18 ns | 19 ns | 19 ns |
Unit Weight | 0.211644 oz | - | - |
Tradename | - | TrenchFET | - |
Series | - | EF | E |
Transistor Type | - | - | 1 N-Channel |
Forward Transconductance Min | - | - | 6 S |