SIHP12N50C-E3

SIHP12N50C-E3
Mfr. #:
SIHP12N50C-E3
Manufacturer:
Vishay
Description:
MOSFET N-CH 500V 12A TO-220AB
Lifecycle:
New from this manufacturer.
Datasheet:
SIHP12N50C-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
SIHP12N50C-E3 more Information
Product Attribute
Attribute Value
Tags
SIHP12N50C, SIHP12N5, SIHP12N, SIHP12, SIHP1, SIHP, SIH
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 500 V 0.555 O 48 nC Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220AB
***ment14 APAC
MOSFET,N CH,DIODE,500V,12A,TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.46ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:208W; Voltage Vgs Max:30V
SiHx12N50C-E3 500V N-Channel Power MOSFETs
Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel Power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 48nC. The low on-resistance of the Vishay Siliconix SiHP12N50C-E3 (TO-220 package), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PCs, LCD TVs, and open-frame power supplies. SiHx12N50C-E3 500V Power MOSFETs feature a gate charge of 48nC. Gate charge times on-resistance is a low 26.54Ω-nC. These Vishay Siliconix Power MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The SiHP12N50C-E3, SiHG12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and conduction losses compared to previous-generation MOSFETs.Learn More
Part # Mfg. Description Stock Price
SIHP12N50C-E3
DISTI # V36:1790_09218728
Vishay IntertechnologiesTrans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant
0
    SIHP12N50C-E3
    DISTI # SIHP12N50C-E3-ND
    Vishay SiliconixMOSFET N-CH 500V 12A TO-220AB
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    579In Stock
    • 3000:$2.4578
    • 1000:$2.5872
    • 500:$3.0677
    • 100:$3.7884
    • 10:$4.6200
    • 1:$5.1700
    SIHP12N50C-E3
    DISTI # SIHP12N50C-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220AB - Tape and Reel (Alt: SIHP12N50C-E3)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 1000:$2.3900
    • 2000:$2.2900
    • 4000:$2.1900
    • 6000:$2.1900
    • 10000:$2.0900
    SIHP12N50C-E3
    DISTI # SIHP12N50C-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220AB (Alt: SIHP12N50C-E3)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1:€2.8900
    • 10:€2.1900
    • 25:€1.7900
    • 50:€1.5900
    • 100:€1.5900
    • 500:€1.5900
    • 1000:€1.4900
    SIHP12N50C-E3
    DISTI # 23T8470
    Vishay IntertechnologiesMOSFET,N CHANNEL,DIODE,500V,12A,TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.46ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes5
      SIHP12N50C-E3
      DISTI # 781-SIHP12N50C-E3
      Vishay IntertechnologiesMOSFET N-Channel 500V
      RoHS: Compliant
      150
      • 1:$4.7100
      • 10:$3.9000
      • 100:$3.2100
      • 250:$3.1100
      • 500:$2.7900
      SIHP12N50CE3Vishay IntertechnologiesPower Field-Effect Transistor, 12A I(D), 500V, 0.555ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant
      Europe - 500
        SIHP12N50C-E3
        DISTI # 1858987
        Vishay IntertechnologiesMOSFET,N CH,DIODE,500V,12A,TO-220AB
        RoHS: Compliant
        59
        • 500:£1.9200
        • 250:£2.1400
        • 100:£2.2100
        • 10:£2.6800
        • 1:£4.0000
        SIHP12N50C-E3Vishay IntertechnologiesMOSFET N-Channel 500V
        RoHS: Compliant
        Americas -
          SIHP12N50C-E3
          DISTI # 1858987
          Vishay IntertechnologiesMOSFET,N CH,DIODE,500V,12A,TO-220AB
          RoHS: Compliant
          5
          • 500:$4.2000
          • 250:$4.6900
          • 100:$4.8400
          • 10:$5.8800
          • 1:$7.1000
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          New and Original
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          OMO.#: OMO-SIHP12N50C-E3-VISHAY

          MOSFET N-CH 500V 12A TO-220AB
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          Mfr.#: SIHP12N60E

          OMO.#: OMO-SIHP12N60E-1190

          New and Original
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          OMO.#: OMO-SIHP12N60E-E3-VISHAY

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          OMO.#: OMO-SIHP12N65E-1190

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          E Series Power MOSFET TO-220AB, 120 m @ 10V
          Availability
          Stock:
          Available
          On Order:
          5500
          Enter Quantity:
          Current price of SIHP12N50C-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
          Reference price (USD)
          Quantity
          Unit Price
          Ext. Price
          1
          $2.54
          $2.54
          10
          $2.41
          $24.13
          100
          $2.29
          $228.58
          500
          $2.16
          $1 079.40
          1000
          $2.03
          $2 031.80
          Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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