 | | |
| PartNumber | SIHP12N50C-E3 | SIHP12N50E-GE3 |
| Description | MOSFET N-Channel 500V | MOSFET 500V Vds 30V Vgs TO-220AB |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Id Continuous Drain Current | 12 A | 10.5 A |
| Rds On Drain Source Resistance | 555 mOhms | 380 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 32 nC | 25 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 208 W | 114 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Height | 15.49 mm | 15.49 mm |
| Length | 10.41 mm | 10.41 mm |
| Width | 4.7 mm | 4.7 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 6 ns | 12 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 35 ns | 16 ns |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 23 ns | 29 ns |
| Typical Turn On Delay Time | 18 ns | 13 ns |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Series | - | E |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP12N50C-E3 | MOSFET N-Channel 500V | |
| SIHP12N50E-GE3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP12N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | |
| SIHP12N50C-E3 | MOSFET N-CH 500V 12A TO-220AB | ||
| SIHP12N50 | New and Original | ||
| SIHP12N50C | New and Original | ||
| SIHP12N50C-E3,P12N50C | New and Original | ||
| SIHP12N50CE3 | Power Field-Effect Transistor, 12A I(D), 500V, 0.555ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |