SIHP18

SIHP180N60E-GE3 vs SIHP18N50C-E3 vs SIHP186N60EF-GE3

 
PartNumberSIHP180N60E-GE3SIHP18N50C-E3SIHP186N60EF-GE3
DescriptionMOSFET 600V Vds 30V Vgs TO-220ABMOSFET 500V Vds 30V Vgs TO-220ABMOSFET Power MOSFET
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYEY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220AB-3TO-220AB-3TO-220AB-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V500 V500 V
Id Continuous Drain Current19 A18 A18 A
Rds On Drain Source Resistance180 mOhms225 mOhms225 mOhms
Vgs th Gate Source Threshold Voltage3 V5 V5 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge22 nC65 nC65 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation156 W223 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
SeriesE--
Transistor Type1 N-Channel E-Series Power MOSFET--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min5.3 S--
Fall Time23 ns44 ns44 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time49 ns27 ns27 ns
Factory Pack Quantity150-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time22 ns32 ns32 ns
Typical Turn On Delay Time14 ns80 ns80 ns
Packaging-Tube-
Unit Weight-0.211644 oz-
Tradename--TrenchFET
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHP180N60E-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP18N50C-E3 MOSFET 500V Vds 30V Vgs TO-220AB
SIHP186N60EF-GE3 MOSFET Power MOSFET
SIHP18N60E-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP18N50C New and Original
SIHP18N50C-E3,SIHP18N50C New and Original
SIHP18N50CE3 Power Field-Effect Transistor, 18A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Vishay
Vishay
SIHP18N50C-E3 MOSFET N-CH 500V 18A TO220
SIHP180N60E-GE3 E Series Power MOSFET TO-220AB, 180 m @ 10V
SIHP18N60E-GE3 MOSFET N-CH 600V 18A TO220AB
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