PartNumber | SIHP180N60E-GE3 | SIHP18N50C-E3 | SIHP186N60EF-GE3 |
Description | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 500V Vds 30V Vgs TO-220AB | MOSFET Power MOSFET |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 500 V | 500 V |
Id Continuous Drain Current | 19 A | 18 A | 18 A |
Rds On Drain Source Resistance | 180 mOhms | 225 mOhms | 225 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 5 V | 5 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 22 nC | 65 nC | 65 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 156 W | 223 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Series | E | - | - |
Transistor Type | 1 N-Channel E-Series Power MOSFET | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 5.3 S | - | - |
Fall Time | 23 ns | 44 ns | 44 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 49 ns | 27 ns | 27 ns |
Factory Pack Quantity | 1 | 50 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 22 ns | 32 ns | 32 ns |
Typical Turn On Delay Time | 14 ns | 80 ns | 80 ns |
Packaging | - | Tube | - |
Unit Weight | - | 0.211644 oz | - |
Tradename | - | - | TrenchFET |