SIHP180N60E-GE3

SIHP180N60E-GE3
Mfr. #:
SIHP180N60E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs TO-220AB
Lifecycle:
New from this manufacturer.
Datasheet:
SIHP180N60E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIHP180N60E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220AB-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
19 A
Rds On - Drain-Source Resistance:
180 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
22 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
156 W
Configuration:
Single
Channel Mode:
Enhancement
Series:
E
Transistor Type:
1 N-Channel E-Series Power MOSFET
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
5.3 S
Fall Time:
23 ns
Product Type:
MOSFET
Rise Time:
49 ns
Factory Pack Quantity:
1
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
22 ns
Typical Turn-On Delay Time:
14 ns
Tags
SIHP18, SIHP1, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHP180N60E-GE3
DISTI # V99:2348_22712082
Vishay IntertechnologiesE Series Power MOSFET TO-220AB, 180 m @ 10V1000
  • 2500:$1.5550
  • 1000:$1.6280
  • 500:$1.9350
  • 250:$2.0830
  • 100:$2.1269
  • 10:$2.6680
  • 1:$3.4738
SIHP180N60E-GE3
DISTI # SIHP180N60E-GE3-ND
Vishay SiliconixMOSFET N-CH TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
1050In Stock
  • 5000:$1.5711
  • 3000:$1.6325
  • 1000:$1.7184
  • 100:$2.3935
  • 25:$2.7616
  • 10:$2.9210
  • 1:$3.2500
SIHP180N60E-GE3
DISTI # 32654123
Vishay IntertechnologiesE Series Power MOSFET TO-220AB, 180 m @ 10V1000
  • 2500:$1.5550
  • 1000:$1.6280
  • 500:$1.9350
  • 250:$2.0830
  • 100:$2.1269
  • 10:$2.6680
  • 5:$3.4738
SIHP180N60E-GE3
DISTI # SIHP180N60E-GE3
Vishay Intertechnologies- Tape and Reel (Alt: SIHP180N60E-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$1.3900
  • 4000:$1.4900
  • 6000:$1.4900
  • 2000:$1.5900
  • 1000:$1.6900
SIHP180N60E-GE3
DISTI # 07AH4768
Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes48
  • 2500:$1.5700
  • 1000:$1.6500
  • 500:$1.9600
  • 100:$2.2500
  • 50:$2.4100
  • 25:$2.5800
  • 10:$2.7400
  • 1:$3.3000
SIHP180N60E-GE3
DISTI # 78-SIHP180N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant
1010
  • 1:$3.2700
  • 10:$2.7100
  • 100:$2.2300
  • 250:$2.1600
  • 500:$1.9400
  • 1000:$1.6300
  • 2500:$1.5500
  • 5000:$1.4900
SIHP180N60E-GE3
DISTI # 3019098
Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-220AB48
  • 500:£1.4500
  • 250:£1.6200
  • 100:£1.6700
  • 10:£2.0200
  • 1:£2.7500
SIHP180N60E-GE3
DISTI # 3019098
Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-220AB
RoHS: Compliant
48
  • 1000:$2.0700
  • 500:$2.2800
  • 250:$2.4200
  • 100:$2.5300
  • 10:$2.9700
  • 1:$3.7700
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of SIHP180N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.27
$3.27
10
$2.71
$27.10
100
$2.23
$223.00
250
$2.16
$540.00
500
$1.94
$970.00
1000
$1.63
$1 630.00
2500
$1.55
$3 875.00
5000
$1.49
$7 450.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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