PartNumber | SIHP21N60EF-GE3 | SIHP21N80AE-GE3 | SIHP21N65EF-GE3 |
Description | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 850V Vds; 30V Vgs TO-220AB | MOSFET 650V Vds 30V Vgs TO-220AB |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
Packaging | Tube | Tube | Tube |
Series | EF | E | EF |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.081130 oz | - | 0.211644 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 800 V | 650 V |
Id Continuous Drain Current | - | 17.4 A | 21 A |
Rds On Drain Source Resistance | - | 235 mOhms | 180 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2 V | 4 V |
Vgs Gate Source Voltage | - | 30 V | 30 V |
Qg Gate Charge | - | 72 nC | 71 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 32 W | 208 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 4 S | - |
Fall Time | - | 76 ns | 42 ns |
Rise Time | - | 38 ns | 34 ns |
Typical Turn Off Delay Time | - | 71 ns | 68 ns |
Typical Turn On Delay Time | - | 21 ns | 22 ns |
Height | - | - | 15.49 mm |
Length | - | - | 10.41 mm |
Width | - | - | 4.7 mm |