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SIHP21N80AE-GE3

SIHP21N80AE-GE3
Mfr. #:
SIHP21N80AE-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 850V Vds; 30V Vgs TO-220AB
Lifecycle:
New from this manufacturer.
Datasheet:
SIHP21N80AE-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIHP21N80AE-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220AB-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
17.4 A
Rds On - Drain-Source Resistance:
235 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
72 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
32 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
E
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
4 S
Fall Time:
76 ns
Product Type:
MOSFET
Rise Time:
38 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
71 ns
Typical Turn-On Delay Time:
21 ns
Tags
SIHP21, SIHP2, SIHP, SIH
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHP21N80AE-GE3
DISTI # V72:2272_22759370		Vishay IntertechnologiesE Series Power MOSFET TO-220AB, 235 m @ 10V0
    SIHP21N80AE-GE3
    DISTI # SIHP21N80AE-GE3-ND    		Vishay SiliconixMOSFET E SERIES 800V TO-220AB
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 3000:$2.1813
    • 1000:$2.2961
    • 100:$3.1982
    • 25:$3.6904
    • 10:$3.9030
    • 1:$4.3500
    SIHP21N80AE-GE3
    DISTI # SIHP21N80AE-GE3    		Vishay Intertechnologies- Tape and Reel (Alt: SIHP21N80AE-GE3)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 6000:$1.9900
    • 10000:$1.9900
    • 4000:$2.0900
    • 1000:$2.1900
    • 2000:$2.1900
    SIHP21N80AE-GE3
    DISTI # 81AC3468    		Vishay IntertechnologiesN-CHANNEL 800V0
    • 2500:$1.9900
    • 1000:$2.1400
    • 500:$2.4100
    • 100:$2.6600
    • 50:$3.0000
    • 25:$3.2500
    • 10:$3.5200
    • 1:$3.9700
    SIHP21N80AE-GE3
    DISTI # 78-SIHP21N80AE-GE3    		Vishay IntertechnologiesMOSFET 850V Vds,30V Vgs TO-220AB
    RoHS: Compliant    		0
    • 1:$4.3700
    • 10:$3.6200
    • 100:$2.9800
    • 250:$2.8900
    • 500:$2.5900
    • 1000:$2.1800
    • 2500:$2.0700
    Image Part # Description
    SIHP21N60EF-GE3

    Mfr.#: SIHP21N60EF-GE3

    OMO.#: OMO-SIHP21N60EF-GE3

    		 MOSFET 600V Vds 30V Vgs TO-220AB
    SIHP21N80AE-GE3

    Mfr.#: SIHP21N80AE-GE3

    OMO.#: OMO-SIHP21N80AE-GE3

    		 MOSFET 850V Vds; 30V Vgs TO-220AB
    SIHP21N65EF-GE3

    Mfr.#: SIHP21N65EF-GE3

    OMO.#: OMO-SIHP21N65EF-GE3

    		 MOSFET 650V Vds 30V Vgs TO-220AB
    SIHP21N65EF-GE3

    Mfr.#: SIHP21N65EF-GE3

    OMO.#: OMO-SIHP21N65EF-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 650V 180mOhms@10V 21A N-Ch EF-SRS
    SIHP21N60EF-GE3

    Mfr.#: SIHP21N60EF-GE3

    OMO.#: OMO-SIHP21N60EF-GE3-VISHAY

    		 MOSFET N-CH 600V 21A TO-220AB
    SIHP21N80AE-GE3

    Mfr.#: SIHP21N80AE-GE3

    OMO.#: OMO-SIHP21N80AE-GE3-VISHAY

    		 E Series Power MOSFET TO-220AB, 235 m @ 10V
    Availability
    Stock:
    Available
    On Order:
    5500
    Enter Quantity:
    Current price of SIHP21N80AE-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $4.37
    $4.37
    10
    $3.62
    $36.20
    100
    $2.98
    $298.00
    250
    $2.89
    $722.50
    500
    $2.59
    $1 295.00
    1000
    $2.18
    $2 180.00
    2500
    $2.07
    $5 175.00
    5000
    $2.00
    $10 000.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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