PartNumber | SIHP33N60E-GE3 | SIHP33N60EF-GE3 |
Description | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 |
Number of Channels | 1 Channel | - |
Transistor Polarity | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | - |
Id Continuous Drain Current | 33 A | - |
Rds On Drain Source Resistance | 99 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | - |
Vgs Gate Source Voltage | 30 V | - |
Qg Gate Charge | 100 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 150 C | - |
Pd Power Dissipation | 278 W | - |
Configuration | Single | - |
Channel Mode | Enhancement | - |
Packaging | Tube | Tube |
Height | 15.49 mm | - |
Length | 10.41 mm | - |
Series | E | EF |
Width | 4.7 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 54 ns | - |
Product Type | MOSFET | MOSFET |
Rise Time | 60 ns | - |
Factory Pack Quantity | 50 | 50 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 99 ns | - |
Typical Turn On Delay Time | 28 ns | - |
Unit Weight | 0.211644 oz | 0.211644 oz |