SIHP6

SIHP6N40D-GE3 vs SIHP6N40D-E3 vs SIHP690N60E-GE3

 
PartNumberSIHP6N40D-GE3SIHP6N40D-E3SIHP690N60E-GE3
DescriptionMOSFET 400V Vds 30V Vgs TO-220ABMOSFET 400V Vds 30V Vgs TO-220ABMOSFET E Series Power MOSFET
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleSMD/SMT
Package / CaseTO-220AB-3TO-220AB-3TO-220AB-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage400 V400 V600 V
Id Continuous Drain Current6 A6 A6.4 A
Rds On Drain Source Resistance1 Ohms1 Ohms600 mOhms
Vgs th Gate Source Threshold Voltage5 V5 V5 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge9 nC9 nC8 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation104 W104 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTube-
Height15.49 mm15.49 mm-
Length10.41 mm10.41 mm-
SeriesDDE
Width4.7 mm4.7 mm-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time8 ns8 ns22 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time11 ns11 ns9 ns
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time14 ns14 ns19 ns
Typical Turn On Delay Time12 ns12 ns12 ns
Unit Weight0.211644 oz0.211644 oz-
Tradename--TrenchFET
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHP6N80E-GE3 MOSFET 800V Vds 30V Vgs TO-220AB
SIHP6N40D-GE3 MOSFET 400V Vds 30V Vgs TO-220AB
SIHP6N40D-E3 MOSFET 400V Vds 30V Vgs TO-220AB
SIHP690N60E-GE3 MOSFET E Series Power MOSFET
SIHP6N65E-GE3 MOSFET 650V Vds 30V Vgs TO-220AB
Vishay
Vishay
SIHP6N65E-GE3 IGBT Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
SIHP6N40D-GE3 IGBT Transistors MOSFET N-CHANNEL 400V
SIHP6N40D-E3 RF Bipolar Transistors MOSFET 400V 1ohm@10V 6A N-Ch D-SRS
SIHP6N80E-GE3 MOSFET N-CHAN 800V TO-220AB
SIHP6N40D New and Original
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