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SIHP6N65E-GE3

SIHP6N65E-GE3
Mfr. #:
SIHP6N65E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 650V Vds 30V Vgs TO-220AB
Lifecycle:
New from this manufacturer.
Datasheet:
SIHP6N65E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP6N65E-GE3 DatasheetSIHP6N65E-GE3 Datasheet (P4-P6)SIHP6N65E-GE3 Datasheet (P7-P8)
ECAD Model:
More Information:
SIHP6N65E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220AB-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
600 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
24 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
78 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
15.49 mm
Length:
10.41 mm
Series:
E
Width:
4.7 mm
Brand:
Vishay / Siliconix
Fall Time:
20 ns
Product Type:
MOSFET
Rise Time:
12 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
30 ns
Typical Turn-On Delay Time:
14 ns
Unit Weight:
0.211644 oz
Tags
SIHP6N, SIHP6, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 650V 7A 3-Pin TO-220AB T/R
***ure Electronics
E Series N Channel 700 V 0.6 O 48 nC Flange Mount Power Mosfet - TO-220AB
***et
N-CHANNEL 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHP6N65E-GE3
DISTI # SIHP6N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 7A TO220AB
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.0150
SIHP6N65E-GE3
DISTI # SIHP6N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin TO-220AB T/R - Tape and Reel (Alt: SIHP6N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.8969
  • 6000:$0.9219
  • 4000:$0.9479
  • 2000:$0.9879
  • 1000:$1.0179
SIHP6N65E-GE3
DISTI # SIHP6N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin TO-220AB T/R (Alt: SIHP6N65E-GE3)
Min Qty: 1
Container: Tape and Reel		Europe - 0
    SIHP6N65E-GE3
    DISTI # 78-SIHP6N65E-GE3    		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
    RoHS: Compliant    		0
    • 1:$2.1700
    • 10:$1.8000
    • 100:$1.4000
    • 500:$1.2200
    • 1000:$1.0000
    • 2500:$0.9450
    • 5000:$0.9100
    SIHP6N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
    RoHS: Compliant    		Americas -
      Image Part # Description
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      OMO.#: OMO-SIHP6N80E-GE3

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      SIHP6N40D-GE3

      Mfr.#: SIHP6N40D-GE3

      OMO.#: OMO-SIHP6N40D-GE3

      		 MOSFET 400V Vds 30V Vgs TO-220AB
      SIHP6N40D-E3

      Mfr.#: SIHP6N40D-E3

      OMO.#: OMO-SIHP6N40D-E3

      		 MOSFET 400V Vds 30V Vgs TO-220AB
      SIHP6N65E-GE3

      Mfr.#: SIHP6N65E-GE3

      OMO.#: OMO-SIHP6N65E-GE3

      		 MOSFET 650V Vds 30V Vgs TO-220AB
      SIHP6N65E-GE3

      Mfr.#: SIHP6N65E-GE3

      OMO.#: OMO-SIHP6N65E-GE3-VISHAY

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      SIHP6N40D-GE3

      Mfr.#: SIHP6N40D-GE3

      OMO.#: OMO-SIHP6N40D-GE3-VISHAY

      		 IGBT Transistors MOSFET N-CHANNEL 400V
      SIHP6N40D-E3

      Mfr.#: SIHP6N40D-E3

      OMO.#: OMO-SIHP6N40D-E3-VISHAY

      		 RF Bipolar Transistors MOSFET 400V 1ohm@10V 6A N-Ch D-SRS
      SIHP6N40D

      Mfr.#: SIHP6N40D

      OMO.#: OMO-SIHP6N40D-1190

      		 New and Original
      SIHP6N80E-GE3

      Mfr.#: SIHP6N80E-GE3

      OMO.#: OMO-SIHP6N80E-GE3-VISHAY

      		 MOSFET N-CHAN 800V TO-220AB
      Availability
      Stock:
      Available
      On Order:
      2500
      Enter Quantity:
      Current price of SIHP6N65E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.17
      $2.17
      10
      $1.80
      $18.00
      100
      $1.40
      $140.00
      500
      $1.22
      $610.00
      1000
      $1.01
      $1 010.00
      2500
      $0.94
      $2 362.50
      5000
      $0.91
      $4 550.00
      10000
      $0.88
      $8 750.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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