PartNumber | SIHS36N50D-E3 | SIHS36N50D | SIHS36N50DE3 |
Description | MOSFET 500V Vds 30V Vgs Super-247 | Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA | |
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 36 A | - | - |
Rds On Drain Source Resistance | 130 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 5 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 83 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 446 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Height | 20.82 mm | - | - |
Length | 15.87 mm | - | - |
Series | D | - | - |
Width | 5.31 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Fall Time | 68 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 89 ns | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 79 ns | - | - |
Typical Turn On Delay Time | 33 ns | - | - |
Part # Aliases | SIHS36N50D | - | - |
Unit Weight | 1.340411 oz | - | - |