PartNumber | SIHU3N50DA-GE3 | SIHU3N50D-E3 | SIHU3N50D-GE3 |
Description | MOSFET 500V Vds 30V Vgs IPAK (TO-251) | MOSFET 500V Vds 30V Vgs IPAK (TO-251) | MOSFET N-CH 500V 3A TO251 IPAK |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-251-3 | TO-251-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
Id Continuous Drain Current | 3 A | 3 A | - |
Rds On Drain Source Resistance | 2.6 Ohms | 3.2 Ohms | - |
Vgs th Gate Source Threshold Voltage | 3 V | 5 V | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Qg Gate Charge | 6 nC | 6 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 69 W | 69 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | - |
Series | D | D | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 1 S | - | - |
Fall Time | 13 ns | 13 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 9 ns | 9 ns | - |
Factory Pack Quantity | 75 | 75 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 11 ns | 11 ns | - |
Typical Turn On Delay Time | 12 ns | 12 ns | - |
Unit Weight | 0.011993 oz | 0.011640 oz | - |
Part # Aliases | - | SIHU3N50D-GE3 | - |