PartNumber | SIHW30N60E-GE3 | SIHW21N80AE-GE3 | SIHW23N60E-GE3 |
Description | MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS | MOSFET E Series Power MOSFET | MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | Through Hole |
Package / Case | TO-263-3 | TO-247-3 | TO-247AD-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 800 V | 600 V |
Id Continuous Drain Current | 29 A | 17.4 A | 23 A |
Rds On Drain Source Resistance | 125 mOhms | 235 mOhms | 158 mOhms |
Vgs th Gate Source Threshold Voltage | 2.8 V | 2 V | 4 V |
Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
Qg Gate Charge | 85 nC | 48 nC | 63 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 250 W | 32 W | 227 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Bulk | Tube | Bulk |
Height | 20.82 mm | - | 20.82 mm |
Length | 15.87 mm | - | 15.87 mm |
Series | E | E | E |
Width | 5.31 mm | - | 5.31 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 36 ns | 76 ns | 34 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 32 ns | 38 ns | 38 ns |
Factory Pack Quantity | 480 | 20 | 480 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 63 ns | 71 ns | 66 ns |
Typical Turn On Delay Time | 19 ns | 21 ns | 22 ns |
Unit Weight | 1.340411 oz | - | 1.340411 oz |
Transistor Type | - | 1 N-Channel | - |