SIHW30N60E-GE3

SIHW30N60E-GE3
Mfr. #:
SIHW30N60E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Lifecycle:
New from this manufacturer.
Datasheet:
SIHW30N60E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHW30N60E-GE3 DatasheetSIHW30N60E-GE3 Datasheet (P4-P6)SIHW30N60E-GE3 Datasheet (P7-P8)
ECAD Model:
More Information:
SIHW30N60E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
29 A
Rds On - Drain-Source Resistance:
125 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.8 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
85 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
250 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Bulk
Height:
20.82 mm
Length:
15.87 mm
Series:
E
Width:
5.31 mm
Brand:
Vishay / Siliconix
Fall Time:
36 ns
Product Type:
MOSFET
Rise Time:
32 ns
Factory Pack Quantity:
480
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
63 ns
Typical Turn-On Delay Time:
19 ns
Unit Weight:
1.340411 oz
Tags
SIHW3, SIHW, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 600V, 29A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
***ical
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AD
***et
Trans MOSFET N-CH 600V 29A 3-Pin TO-247AD
***nell
MOSFET, N CH, 600V, 29A, TO-247AD-3
***i-Key
MOSFET N-CH 600V 29A TO-247AD
***
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHW30N60E-GE3
DISTI # SIHW30N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 29A TO-247AD
RoHS: Compliant
Min Qty: 1
Container: Tube
161In Stock
  • 100:$4.7093
  • 25:$5.4336
  • 10:$5.7480
  • 1:$6.4000
SIHW30N60E-GE3
DISTI # SIHW30N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin TO-247AD - Tape and Reel (Alt: SIHW30N60E-GE3)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
    SIHW30N60E-GE3
    DISTI # 68W7076
    Vishay IntertechnologiesMOSFET, N CH, 600V, 29A, TO-247AD-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.104ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
      SIHW30N60E-GE3
      DISTI # 78-SIHW30N60E-GE3
      Vishay IntertechnologiesMOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
      RoHS: Compliant
      480
      • 1:$6.4400
      • 10:$5.3300
      • 100:$4.3900
      • 250:$4.2500
      • 500:$3.8100
      • 1000:$3.2100
      • 2500:$3.0500
      SIHW30N60E-GE3Vishay Intertechnologies 500
        SIHW30N60E-GE3Vishay IntertechnologiesMOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
        RoHS: Compliant
        Americas -
          Image Part # Description
          SIHW30N60E-GE3

          Mfr.#: SIHW30N60E-GE3

          OMO.#: OMO-SIHW30N60E-GE3

          MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
          SIHW30N60E-GE3

          Mfr.#: SIHW30N60E-GE3

          OMO.#: OMO-SIHW30N60E-GE3-VISHAY

          MOSFET N-CH 600V 29A TO-247AD
          Availability
          Stock:
          480
          On Order:
          2463
          Enter Quantity:
          Current price of SIHW30N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
          Reference price (USD)
          Quantity
          Unit Price
          Ext. Price
          1
          $6.44
          $6.44
          10
          $5.33
          $53.30
          100
          $4.39
          $439.00
          250
          $4.25
          $1 062.50
          500
          $3.81
          $1 905.00
          1000
          $3.21
          $3 210.00
          2500
          $3.05
          $7 625.00
          Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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