SIR63

SIR638ADP-T1-RE3 vs SIR638DP-T1-GE3 vs SIR632DP-T1-RE3

 
PartNumberSIR638ADP-T1-RE3SIR638DP-T1-GE3SIR632DP-T1-RE3
DescriptionMOSFET 40V Vds 20V Vgs PowerPAK SO-8MOSFET 40V Vds 20V Vgs PowerPAK SO-8MOSFET 150V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerPAK-SO-8-PowerPAK-SO-8
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage40 V-150 V
Id Continuous Drain Current100 A-29 A
Rds On Drain Source Resistance730 uOhms-28.5 mOhms
Vgs th Gate Source Threshold Voltage1.1 V-2 V
Vgs Gate Source Voltage20 V, - 16 V-20 V
Qg Gate Charge165 nC-21 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation104 W-69.5 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAKTrenchFET, PowerPAK
PackagingReelReelReel
SeriesSIRSIRSIR
Transistor Type1 N-Channel-1 N-Channel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min147 S-18 S
Fall Time10 ns-21 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time42 ns-27 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time42 ns-9 ns
Typical Turn On Delay Time15 ns-9 ns
Unit Weight-0.002610 oz0.017870 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR638ADP-T1-RE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
SIR638DP-T1-GE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
SIR632DP-T1-RE3 MOSFET 150V Vds 20V Vgs PowerPAK SO-8
SIR638DP-T1-RE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
Vishay
Vishay
SIR638DP-T1-GE3 MOSFET N-CH 40V 100A PPAK SO-8
SIR632DP-T1-RE3 N-CHANNEL 150-V (D-S) MOSFET
SIR638ADP-T1-RE3 MOSFET N-CH 40V 100A POWERPAKSO
SIR638DP-T1-RE3 MOSFET N-CH 40V 100A POWERPAKSO
Top