SIR6

SIR606BDP-T1-RE3 vs SIR606DP-T1-GE3 vs SIR608DP-T1-RE3

 
PartNumberSIR606BDP-T1-RE3SIR606DP-T1-GE3SIR608DP-T1-RE3
DescriptionMOSFET 100V Vds 20V Vgs PowerPAK SO-8MOSFET 100V Vds 20V Vgs PowerPAK SO-8MOSFET 45V Vds; 20/-16V Vgs PowerPAK SO-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8PowerPAK-SO-8PowerPAK SO-8
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V-45 V
Id Continuous Drain Current38.7 A-208 A
Rds On Drain Source Resistance14.5 mOhms-1.2 mOhms
Vgs th Gate Source Threshold Voltage2 V-1.1 V
Vgs Gate Source Voltage10 V-20 V, - 16 V
Qg Gate Charge20 nC-167 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation62.5 W-104 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReelReel
SeriesSIRSIRE
Transistor Type1 N-Channel-1 N-Channel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time5 ns-8 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time5 ns-10 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time19 ns-50 ns
Typical Turn On Delay Time12 ns-19 ns
Height-1.04 mm-
Length-6.15 mm-
Width-5.15 mm-
Unit Weight-0.017870 oz-
Forward Transconductance Min--120 S
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR606BDP-T1-RE3 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
SIR638ADP-T1-RE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
SIR626DP-T1-RE3 MOSFET 60V Vds 20V Vgs PowerPAK SO-8
SIR624DP-T1-GE3 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR638DP-T1-GE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
SIR616DP-T1-GE3 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR632DP-T1-RE3 MOSFET 150V Vds 20V Vgs PowerPAK SO-8
SIR622DP-T1-GE3 MOSFET 150V Vds 20V Vgs PowerPAK SO-8
SIR606DP-T1-GE3 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
SIR640ADP-T1-GE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
SIR610DP-T1-RE3 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR622DP-T1-RE3 MOSFET 150V Vds; 20V Vgs PowerPAK SO-8
SIR608DP-T1-RE3 MOSFET 45V Vds; 20/-16V Vgs PowerPAK SO-8
SIR626LDP-T1-RE3 MOSFET 60V Vds; 20V Vgs PowerPAK SO-8
SIR638DP-T1-RE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
SIR624DP-T1-RE3 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR618DP-T1-GE3 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR642DP-T1-GE3 MOSFET RECOMMENDED ALT 781-SIR470DP-T1-GE3
SIR644DP-T1-GE3 MOSFET RECOMMENDED ALT 78-SIRA14DP-T1-GE3
Vishay
Vishay
SIR640ADP-T1-GE3 IGBT Transistors MOSFET 40V 2mOhm@10V 60A N-CH
SIR642DP-T1-GE3 IGBT Transistors MOSFET 40V 60A 83W 2.4mohms @ 10V
SIR644DP-T1-GE3 IGBT Transistors MOSFET 40V 2.7mOhm@60A 60A N-CH
SIR618DP-T1-GE3 MOSFET N-CH 200V 14.2A SO-8
SIR606DP-T1-GE3 MOSFET N-CH 100V 37A POWERPAKSO
SIR616DP-T1-GE3 MOSFET N-CH 200V 20.2A SO-8
SIR622DP-T1-GE3 MOSFET N-CH 150V 51.6A SO-8
SIR624DP-T1-GE3 MOSFET N-CH 200V 18.6A SO-8
SIR626DP-T1-RE3 MOSFET N-CH 60V 100A POWERPAKSO
SIR638DP-T1-GE3 MOSFET N-CH 40V 100A PPAK SO-8
SIR640DP-T1-GE3 MOSFET N-CH 40V 60A PPAK SO-8
SIR606BDP-T1-RE3 MOSFET N-CHAN 100V POWERPAK SO-8
SIR608DP-T1-RE3 MOSFET N-CHAN 45V POWERPAK SO-8
SIR610DP-T1-RE3 N-Channel 200 V (D-S) MOSFET
SIR622DP-T1-RE3 N-CHANNEL 150-V (D-S) MOSFET
SIR626LDP-T1-RE3 N-Channel 60-V (D-S) MOSFET PowerPAK SO-8 250M SG 2 mil , 1.5 m @ 10V m @ 7.5V 2.1 m @ 4.5V
SIR632DP-T1-RE3 N-CHANNEL 150-V (D-S) MOSFET
SIR638ADP-T1-RE3 MOSFET N-CH 40V 100A POWERPAKSO
SIR638DP-T1-RE3 MOSFET N-CH 40V 100A POWERPAKSO
SIR646DP-T1-GE3 MOSFET N-CH 40V 60A PPAK 8SO
SIR604ADP-T1-E3 New and Original
SIR604ADP-T1-GE3 New and Original
SIR610DP-T1-E3 New and Original
SIR610DP-T1-GE3 New and Original
SIR622 21.5VDC New and Original
SIR626DP New and Original
SIR640ADP New and Original
SIR642DP-T1-E3 New and Original
SIR642DPT1GE3 Power Field-Effect Transistor, 60A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SIR644DP New and Original
SIR644DP-T1-E3 New and Original
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