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SIR624DP-T1-RE3

SIR624DP-T1-RE3
Mfr. #:
SIR624DP-T1-RE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 200V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SIR624DP-T1-RE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
18.6 A
Rds On - Drain-Source Resistance:
60 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
30 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
52 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Series:
SIR
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
26 S
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
18 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
16 ns
Typical Turn-On Delay Time:
9 ns
Tags
SIR62, SIR6, SIR
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-Channel 200V 18.6A 8-Pin PowerPAK SOIC
***i-Key
N-CHANNEL 200-V (D-S) MOSFET
***ark
Mosfet, N-Ch, 200V, 18.6A, 150Deg C, 52W; Transistor Polarity:n Channel; Continuous Drain Current Id:18.6A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.05Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 18.6A, 150DEG C, 52W; Transistor Polarity:N Channel; Continuous Drain Current Id:18.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:52W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:ThunderFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 200V, 18.6A, 150°C, 52W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:18.6A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.05ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:52W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:ThunderFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Image Part # Description
SIR624DP-T1-GE3

Mfr.#: SIR624DP-T1-GE3

OMO.#: OMO-SIR624DP-T1-GE3

 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR624DP-T1-RE3

Mfr.#: SIR624DP-T1-RE3

OMO.#: OMO-SIR624DP-T1-RE3

 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR624DP-T1-GE3

Mfr.#: SIR624DP-T1-GE3

OMO.#: OMO-SIR624DP-T1-GE3-VISHAY

 MOSFET N-CH 200V 18.6A SO-8
Availability
Stock:
Available
On Order:
1000
Enter Quantity:
Current price of SIR624DP-T1-RE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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