SIR642DP-T1-GE3

SIR642DP-T1-GE3
Mfr. #:
SIR642DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SIR470DP-T1-GE3
Lifecycle:
New from this manufacturer.
Datasheet:
SIR642DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR642DP-T1-GE3 DatasheetSIR642DP-T1-GE3 Datasheet (P4-P6)SIR642DP-T1-GE3 Datasheet (P7-P9)SIR642DP-T1-GE3 Datasheet (P10-P12)SIR642DP-T1-GE3 Datasheet (P13)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
60 A
Rds On - Drain-Source Resistance:
1.9 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
84 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
83 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Height:
1.04 mm
Length:
6.15 mm
Series:
SIR
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
70 S
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
36 ns
Typical Turn-On Delay Time:
14 ns
Unit Weight:
0.017870 oz
Tags
SIR642, SIR64, SIR6, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 40V 35.4A 8-Pin PowerPAK SO EP
***et Europe
Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK SO T/R
***ark
N-Ch PowerPAK SO-8 BWL split gate 40V 2.4mohm@10V
***i-Key
MOSFET N-CH 40V 60A PPAK SO-8
***et
N-CH POWERPAK SO-8 BWL SPLIT GATE 40V 2.4MOHM
***
N-CHANNEL 40-V (D-S)
Part # Mfg. Description Stock Price
SIR642DP-T1-GE3
DISTI # SIR642DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 3000:$0.7618
SIR642DP-T1-GE3
DISTI # SIR642DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    SIR642DP-T1-GE3
    DISTI # SIR642DP-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      SIR642DP-T1-GE3
      DISTI # SIR642DP-T1-GE3
      Vishay IntertechnologiesTrans MOSFET N-CH 40V 60A 8-Pin PowerPAK SO T/R (Alt: SIR642DP-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Europe - 0
      • 3000:€1.4999
      • 6000:€1.0759
      • 12000:€0.8719
      • 18000:€0.7709
      • 30000:€0.7379
      SIR642DP-T1-GE3
      DISTI # 78-SIR642DP-T1-GE3
      Vishay IntertechnologiesMOSFET 40V 60A 83W 2.4mohms @ 10V
      RoHS: Compliant
      0
      • 1:$1.6000
      • 10:$1.3300
      • 100:$1.0300
      • 500:$0.8980
      • 1000:$0.7440
      • 3000:$0.6930
      • 6000:$0.6670
      SIR642DPT1GE3Vishay Intertechnologies 
      RoHS: Compliant
      Europe - 3000
        Image Part # Description
        SIR642DP-T1-GE3

        Mfr.#: SIR642DP-T1-GE3

        OMO.#: OMO-SIR642DP-T1-GE3

        MOSFET RECOMMENDED ALT 781-SIR470DP-T1-GE3
        SIR642DP-T1-GE3

        Mfr.#: SIR642DP-T1-GE3

        OMO.#: OMO-SIR642DP-T1-GE3-VISHAY

        IGBT Transistors MOSFET 40V 60A 83W 2.4mohms @ 10V
        SIR642DP-T1-E3

        Mfr.#: SIR642DP-T1-E3

        OMO.#: OMO-SIR642DP-T1-E3-1190

        New and Original
        SIR642DPT1GE3

        Mfr.#: SIR642DPT1GE3

        OMO.#: OMO-SIR642DPT1GE3-1190

        Power Field-Effect Transistor, 60A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        Availability
        Stock:
        Available
        On Order:
        1985
        Enter Quantity:
        Current price of SIR642DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Start with
        Newest Products
        Top