PartNumber | SIR640ADP-T1-GE3 | SIR642DP-T1-GE3 | SIR640DP-T1-GE3 |
Description | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | MOSFET RECOMMENDED ALT 781-SIR470DP-T1-GE3 | MOSFET N-CH 40V 60A PPAK SO-8 |
Manufacturer | Vishay | Vishay | VISHAY |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | E | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
Id Continuous Drain Current | 100 A | 60 A | - |
Rds On Drain Source Resistance | 1.65 mOhms | 1.9 mOhms | - |
Vgs th Gate Source Threshold Voltage | 900 mV | 1.2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 90 nC | 84 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 104 W | 83 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
Packaging | Reel | Reel | - |
Series | SIR | SIR | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 82 S | 70 S | - |
Fall Time | 8 ns | 9 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 6 ns | 11 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 44 ns | 36 ns | - |
Typical Turn On Delay Time | 17 ns | 14 ns | - |
Unit Weight | 0.017870 oz | 0.017870 oz | - |
Height | - | 1.04 mm | - |
Length | - | 6.15 mm | - |
Width | - | 5.15 mm | - |