SIR826D

SIR826DP-T1-GE3 vs SIR826DP-T1-RE3 vs SIR826DP

 
PartNumberSIR826DP-T1-GE3SIR826DP-T1-RE3SIR826DP
DescriptionMOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FETMOSFET 80V Vds TrenchFET PowerPAK SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current60 A60 A-
Rds On Drain Source Resistance4.8 mOhms4 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge60 nC90 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation104 W104 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
Height1.04 mm--
Length6.15 mm--
SeriesSIRSIR-
Transistor Type1 N-Channel--
Width5.15 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min80 S80 S-
Fall Time8 ns8 ns-
Product TypeMOSFETMOSFET-
Rise Time11 ns11 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time36 ns36 ns-
Typical Turn On Delay Time12 ns12 ns-
Part # AliasesSIR826DP-GE3--
Unit Weight0.017870 oz0.017870 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR826DP-T1-GE3 MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET
SIR826DP-T1-RE3 MOSFET 80V Vds TrenchFET PowerPAK SO-8
SIR826DP New and Original
Vishay
Vishay
SIR826DP-T1-GE3 MOSFET N-CH 80V 60A PPAK SO-8
SIR826DP-T1-RE3 MOSFET N-CH 80V 60A POWERPAKSO-8
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