PartNumber | SIR826DP-T1-GE3 | SIR826DP-T1-RE3 | SIR826DP |
Description | MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET | MOSFET 80V Vds TrenchFET PowerPAK SO-8 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
Id Continuous Drain Current | 60 A | 60 A | - |
Rds On Drain Source Resistance | 4.8 mOhms | 4 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 60 nC | 90 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 104 W | 104 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
Packaging | Reel | Reel | - |
Height | 1.04 mm | - | - |
Length | 6.15 mm | - | - |
Series | SIR | SIR | - |
Transistor Type | 1 N-Channel | - | - |
Width | 5.15 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 80 S | 80 S | - |
Fall Time | 8 ns | 8 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 11 ns | 11 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 36 ns | 36 ns | - |
Typical Turn On Delay Time | 12 ns | 12 ns | - |
Part # Aliases | SIR826DP-GE3 | - | - |
Unit Weight | 0.017870 oz | 0.017870 oz | - |