SIRA00

SIRA00DP-T1-GE3 vs SIRA00DP-T1-GE3-CUT TAPE vs SIRA00DP

 
PartNumberSIRA00DP-T1-GE3SIRA00DP-T1-GE3-CUT TAPESIRA00DP
DescriptionMOSFET 30V 1mOhm@10V 60A N-Ch G-IV
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance830 uOhms--
Vgs th Gate Source Threshold Voltage1.1 V--
Vgs Gate Source Voltage20 V, - 16 V--
Qg Gate Charge220 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation104 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
Height1.04 mm--
Length6.15 mm--
SeriesSIR--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandVishay / Siliconix--
Forward Transconductance Min140 S--
Fall Time11 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time67 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesSIRA00DP-GE3--
Unit Weight0.017870 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIRA00DP-T1-GE3 MOSFET 30V 1mOhm@10V 60A N-Ch G-IV
SIRA00DP-T1-RE3 MOSFET 30V Vds TrenchFET PowerPAK SO-8
SIRA00DP-T1-GE3-CUT TAPE New and Original
SIRA00DP New and Original
SIRA00DP-TI-GE3 New and Original
Vishay
Vishay
SIRA00DP-T1-GE3 MOSFET N-CH 30V 100A PPAK SO-8
SIRA00DP-T1-RE3 MOSFET N-CH 30V 100A POWERPAKSO
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