SIRA

SIRA01DP-T1-GE3 vs SIRA00DP-T1-GE3 vs SIRA00DP-T1-RE3

 
PartNumberSIRA01DP-T1-GE3SIRA00DP-T1-GE3SIRA00DP-T1-RE3
DescriptionMOSFET -30V Vds 16V Vgs PowerPAK SO-8MOSFET 30V 1mOhm@10V 60A N-Ch G-IVMOSFET 30V Vds TrenchFET PowerPAK SO-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYEY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8PowerPAK-SO-8PowerPAK-SO-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current60 A100 A100 A
Rds On Drain Source Resistance4.9 mOhms830 uOhms830 uOhms
Vgs th Gate Source Threshold Voltage2.2 V1.1 V1.1 V
Vgs Gate Source Voltage16 V, - 20 V20 V, - 16 V20 V, - 16 V
Qg Gate Charge56 nC220 nC220 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation62.5 W104 W104 W
ConfigurationSingleSingleSingle
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAKTrenchFET, PowerPAK
PackagingReelReelReel
SeriesSIRSIRSIR
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time10 ns11 ns11 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time6 ns14 ns14 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time39 ns67 ns67 ns
Typical Turn On Delay Time15 ns18 ns18 ns
Channel Mode-EnhancementEnhancement
Height-1.04 mm-
Length-6.15 mm-
Transistor Type-1 N-Channel-
Width-5.15 mm-
Forward Transconductance Min-140 S140 S
Part # Aliases-SIRA00DP-GE3-
Unit Weight-0.017870 oz0.017870 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIRA14BDP-T1-GE3 MOSFET 30V Vds; 20/-16V Vgs PowerPAK SO-8
SIRA01DP-T1-GE3 MOSFET -30V Vds 16V Vgs PowerPAK SO-8
SIRA12BDP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRA04DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRA02DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRA18ADP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRA00DP-T1-GE3 MOSFET 30V 1mOhm@10V 60A N-Ch G-IV
SIRA14DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRA12DP-T1-GE3 MOSFET 30V 4.3mOhm@10V 25A N-Ch G-IV
SIRA10DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRA06DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRA18BDP-T1-GE3 MOSFET N-Channel 30 V (D-S) MOSFET
SIRA16DP-T1-GE3 MOSFET 30V Vds TrenchFET PowerPAK SO-8
SIRA00DP-T1-RE3 MOSFET 30V Vds TrenchFET PowerPAK SO-8
SIRA10DP-T1-GE3. MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV
SIRA00DP-T1-GE3-CUT TAPE New and Original
SIRA04DP-T1-GE3-CUT TAPE New and Original
SIRA06DP-T1-GE3-CUT TAPE New and Original
SIRA12DP-T1-GE3-CUT TAPE New and Original
SIRA00DP New and Original
SIRA00DP-TI-GE3 New and Original
SIRA02 New and Original
SIRA02DP New and Original
SIRA04DP New and Original
SIRA04DPT1GE3 Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SIRA06DP New and Original
SIRA06DP-T1 New and Original
SIRA06DP-T1-GE3 PB-FREE New and Original
SIRA06DP-TE-GE3 New and Original
SIRA10DP New and Original
SIRA10DP-T1-E3 New and Original
SIRA12 New and Original
SIRA12DP-T1-E3 New and Original
SIRA14DP-T1-GE3-G New and Original
SIRA15D New and Original
SIRA18ADP-T1-E3 New and Original
Vishay
Vishay
SIRA10BDP-T1-GE3 MOSFET N-CHAN 30V
SIRA12BDP-T1-GE3 MOSFET N-CHAN 30V
SIRA14BDP-T1-GE3 MOSFET N-CHAN 30-V POWERPAK SO-8
SIRA01DP-T1-GE3 MOSFET P-CH 30V POWERPAK SO-8
SIRA16DP-T1-GE3 MOSFET N-CH 30V D-S PPAK SO-8
SIRA00DP-T1-GE3 MOSFET N-CH 30V 100A PPAK SO-8
SIRA02DP-T1-GE3 MOSFET N-CH 30V 50A PPAK SO-8
SIRA04DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
SIRA06DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
SIRA10DP-T1-GE3 MOSFET N-CH 30V 60A PPAK SO-8
SIRA12DP-T1-GE3 MOSFET N-CH 30V 25A PPAK SO-8
SIRA14DP-T1-GE3 MOSFET N-CH 30V 58A PPAK SO-8
SIRA18ADP-T1-GE3 MOSFET N-CH 30V 30.6A POWERPAKSO
SIRA00DP-T1-RE3 MOSFET N-CH 30V 100A POWERPAKSO
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