PartNumber | SIRA01DP-T1-GE3 | SIRA00DP-T1-GE3 | SIRA00DP-T1-RE3 |
Description | MOSFET -30V Vds 16V Vgs PowerPAK SO-8 | MOSFET 30V 1mOhm@10V 60A N-Ch G-IV | MOSFET 30V Vds TrenchFET PowerPAK SO-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
Id Continuous Drain Current | 60 A | 100 A | 100 A |
Rds On Drain Source Resistance | 4.9 mOhms | 830 uOhms | 830 uOhms |
Vgs th Gate Source Threshold Voltage | 2.2 V | 1.1 V | 1.1 V |
Vgs Gate Source Voltage | 16 V, - 20 V | 20 V, - 16 V | 20 V, - 16 V |
Qg Gate Charge | 56 nC | 220 nC | 220 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 62.5 W | 104 W | 104 W |
Configuration | Single | Single | Single |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Series | SIR | SIR | SIR |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 10 ns | 11 ns | 11 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 6 ns | 14 ns | 14 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 39 ns | 67 ns | 67 ns |
Typical Turn On Delay Time | 15 ns | 18 ns | 18 ns |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 1.04 mm | - |
Length | - | 6.15 mm | - |
Transistor Type | - | 1 N-Channel | - |
Width | - | 5.15 mm | - |
Forward Transconductance Min | - | 140 S | 140 S |
Part # Aliases | - | SIRA00DP-GE3 | - |
Unit Weight | - | 0.017870 oz | 0.017870 oz |