SIRA02DP-T1-GE3

Mfr. #:: SIRA02DP-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:: New from this manufacturer.
Datasheet:: SIRA02DP-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SIRA02DP-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-SO-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 50 A

Rds On - Drain-Source Resistance:: 1.65 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.1 V

Vgs - Gate-Source Voltage:: 20 V, - 16 V

Qg - Gate Charge:: 117 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 71.4 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET, PowerPAK

Packaging:: Reel

Series:: SIR

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 110 S

Fall Time:: 8 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 42 ns

Typical Turn-On Delay Time:: 16 ns

Part # Aliases:: SIRA02DP-GE3

Unit Weight:: 0.017870 oz

Tags: SIRA02, SIRA0, SIRA, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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SIRA02DP-T1-GE3 Description

***ark: MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr

***(Formerly Allied Electronics): Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 50A; 2mohm @ 10V; PowerPAK SO-8

***nell: MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00165ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

***ark: MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr

***(Formerly Allied Electronics): Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK SO-8

***ure Electronics: Single N-Channel 30 V 2.15 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8

***nell: MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:27.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

***ark: MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Cur

***ure Electronics: Single N-Channel 30 V 2.5 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8

***(Formerly Allied Electronics): Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.5mohm @ 10V; PowerPAK SO-8

***ark: MOSFET, N-CH, 30V, 60A, POWERPAK SO-8; Transistor Polarity:N Channel; Continuous

***enic: 30V 60A 6.25W 1.45m´Î@10V20A 2.3V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS

***ical: Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R

***el Electronic: MOSFET 30V 60A 104W 1.45mohm @ 10V

*** Services: CoC and 2-years warranty / RFQ for pricing

***DA Technology Co., Ltd.: Product Description Demo for Development.

*** Devices: TRANS, SBU, TED, DPN, SIR812DP

***nell: MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***roFlash: Mosfet, Power; N-ch; Vdss 30V; Rds(on) 7.5MILLIOHMS; Id 65A; D-pak (TO-252AA); Pd 75W

***ure Electronics: Single N-Channel 30V 10 mOhm 10 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ment14 APAC: N CHANNEL MOSFET, 30V, 65A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:65A;

***nsix Microsemi: Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

***ark: Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes

***emi: N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ

***ure Electronics: N-Channel 30 V 55 A 10.5 mO Surface Mount PowerTrench Mosfet - DPAK

***r Electronics: Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:60mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:55A; Package / Case:DPAK; Power Dissipation Pd:60mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.

SIRA02DP-T1-GE3 More Information

SkyFET® Power MOSFETs: Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

Part #	Mfg.	Description	Stock	Price
SIRA02DP-T1-GE3 DISTI # V72:2272_09216066	Vishay Intertechnologies	Trans MOSFET N-CH 30V 37.3A 8-Pin PowerPAK SO EP T/R RoHS: Compliant	2965	1000:$0.9245 500:$0.9447 250:$1.0902 100:$1.1015 25:$1.3724 10:$1.4456 1:$1.9291
SIRA02DP-T1-GE3 DISTI # V36:1790_09216066	Vishay Intertechnologies	Trans MOSFET N-CH 30V 37.3A 8-Pin PowerPAK SO EP T/R RoHS: Compliant	0	3000000:$0.7772 1500000:$0.7774 300000:$0.7882 30000:$0.8052 3000:$0.8080
SIRA02DP-T1-GE3 DISTI # SIRA02DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 50A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SIRA02DP-T1-GE3 DISTI # SIRA02DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 50A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIRA02DP-T1-GE3 DISTI # SIRA02DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 50A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.8080
SIRA02DP-T1-GE3 DISTI # 31289202	Vishay Intertechnologies	Trans MOSFET N-CH 30V 37.3A 8-Pin PowerPAK SO EP T/R RoHS: Compliant	2965	9:$1.9291
SIRA02DP-T1-GE3 DISTI # SIRA02DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 37.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA02DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 3000	30000:$0.7299 18000:$0.7499 12000:$0.7719 6000:$0.8049 3000:$0.8289
SIRA02DP-T1-GE3 DISTI # SIRA02DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 37.3A 8-Pin PowerPAK SO T/R (Alt: SIRA02DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.6739 18000:€0.7039 12000:€0.7969 6000:€0.9829 3000:€1.3699
SIRA02DP-T1-GE3 DISTI # SIRA02DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 37.3A 8-Pin PowerPAK SO T/R (Alt: SIRA02DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIRA02DP-T1-GE3 DISTI # 05W5776	Vishay Intertechnologies	MOSFET, 30V, 50A, PPAKSO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.00165ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.1V,No. of Pins:8Pins RoHS Compliant: Yes	2780	500:$1.0100 100:$1.1500 50:$1.2600 25:$1.3700 10:$1.4800 1:$1.7900
SIRA02DP-T1-GE3 DISTI # 70243883	Vishay Siliconix	Semiconcuctor,Mosfet,TrenchFET,N-Channel,30V,50A,2mohm @ 10V,PowerPAK SO-8 RoHS: Compliant	0	3000:$0.8590
SIRA02DP-T1-GE3 DISTI # 78-SIRA02DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	2933	1:$1.7700 10:$1.4700 100:$1.1400 500:$0.9970 1000:$0.8260 3000:$0.7690 6000:$0.7410 9000:$0.7120
SIRA02DP-T1-GE3	Vishay Intertechnologies		4002
SIRA02DP-T1-GE3 DISTI # 7879361P	Vishay Intertechnologies	MOSFET N-CH 30V 37.3A POWERPAK SO8, RL	2990	25:£0.4900
SIRA02DP-T1-GE3 DISTI # 2114702	Vishay Intertechnologies	MOSFET, 30V, 50A, PPAKSO-8	2867	500:£0.6660 250:£0.6770 100:£0.6880 25:£0.6980 5:£0.7880
SIRA02DP-T1-GE3 DISTI # 2114702	Vishay Intertechnologies	MOSFET, 30V, 50A, PPAKSO-8 RoHS: Compliant	2779	3000:$1.4700 500:$1.5000 100:$1.7200 10:$2.2200 1:$2.6700
SIRA02DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas -	3000:$0.7920 6000:$0.7520 12000:$0.7290 18000:$0.7090

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SIRA02DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes