SIRA10DP-T1-GE3

SIRA10DP-T1-GE3
Mfr. #:
SIRA10DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SIRA10DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIRA10DP-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
60 A
Rds On - Drain-Source Resistance:
2.8 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.1 V
Vgs - Gate-Source Voltage:
20 V, - 16 V
Qg - Gate Charge:
51 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
40 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Height:
1.04 mm
Length:
6.15 mm
Series:
SIR
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
52 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
27 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
SIRA10DP-GE3
Unit Weight:
0.017870 oz
Tags
SIRA10DP-T, SIRA10D, SIRA10, SIRA1, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 30A; 3.7mohm @ 10V; PowerPAK SO-8
***ical
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
***ark
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:40W; Operating Temperature;RoHS Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SIRA10DP-T1-GE3
DISTI # V72:2272_09216072
Vishay IntertechnologiesTrans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO EP
RoHS: Compliant
236
  • 100:$0.5833
  • 25:$0.7151
  • 10:$0.7177
  • 1:$0.8285
SIRA10DP-T1-GE3
DISTI # SIRA10DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.4620
SIRA10DP-T1-GE3
DISTI # SIRA10DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.5099
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
SIRA10DP-T1-GE3
DISTI # SIRA10DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.5099
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
SIRA10DP-T1-GE3
DISTI # 25789956
Vishay IntertechnologiesTrans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO EP
RoHS: Compliant
236
  • 100:$0.5833
  • 25:$0.7151
  • 16:$0.7177
SIRA10DP-T1-GE3
DISTI # SIRA10DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO T/R (Alt: SIRA10DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 15000
  • 3000:$0.7370
  • 6000:$0.5669
  • 9000:$0.4512
  • 15000:$0.3812
  • 30000:$0.3509
  • 75000:$0.3402
  • 150000:$0.3300
SIRA10DP-T1-GE3
DISTI # SIRA10DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA10DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.4359
  • 6000:$0.4229
  • 12000:$0.4059
  • 18000:$0.3949
  • 30000:$0.3839
SIRA10DP-T1-GE3
DISTI # SIRA10DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO T/R (Alt: SIRA10DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.7209
  • 6000:€0.4919
  • 12000:€0.4229
  • 18000:€0.3909
  • 30000:€0.3639
SIRA10DP-T1-GE3
DISTI # 68W7083
Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 30A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.1V , RoHS Compliant: Yes0
  • 1:$1.0500
  • 25:$0.8650
  • 50:$0.7640
  • 100:$0.6630
  • 250:$0.6170
  • 500:$0.5710
  • 1000:$0.5010
SIRA10DP-T1-GE3
DISTI # 68W7084
Vishay IntertechnologiesMOSFET, N CH, 30V, 30A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.1V, RoHS Compliant: Yes0
  • 1:$0.4440
  • 3000:$0.4410
  • 6000:$0.4200
  • 12000:$0.3720
SIRA10DP-T1-GE3
DISTI # 70243886
Vishay SiliconixSemiconcuctor,Mosfet,TrenchFET,N-Channel,30V,30A,3.7mohm @ 10V,PowerPAK SO-8
RoHS: Compliant
0
  • 3000:$0.4150
SIRA10DP-T1-GE3
DISTI # 78-SIRA10DP-T1-GE3
Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant
0
  • 1:$1.0500
  • 10:$0.8650
  • 100:$0.6630
  • 500:$0.5710
  • 1000:$0.5400
  • 3000:$0.5000
SIRA10DP-T1-GE3
DISTI # C1S803603492911
Vishay IntertechnologiesMOSFETs236
  • 100:$0.5790
  • 50:$0.7084
  • 25:$0.7115
  • 10:$0.7146
SIRA10DP-T1-GE3
DISTI # 2459336
Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 30A, POWERPAK SO
RoHS: Compliant
0
  • 3000:£0.4400
SIRA10DP-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant
Americas -
  • 3000:$0.4250
  • 6000:$0.4020
  • 12000:$0.3890
  • 24000:$0.3830
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of SIRA10DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.04
$1.04
10
$0.86
$8.64
100
$0.66
$66.20
500
$0.57
$285.00
1000
$0.45
$449.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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