| PartNumber | SIRA12BDP-T1-GE3 | SIRA10DP-T1-GE3 | SIRA10DP-T1-GE3. |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 60 A | 60 A | - |
| Rds On Drain Source Resistance | 4.3 mOhms | 2.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.1 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V, - 16 V | - |
| Qg Gate Charge | 21 nC | 51 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 38 W | 40 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Cut Tape |
| Series | SIR | SIR | SIR |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 67 S | 52 S | - |
| Fall Time | 10 ns | 10 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns | 10 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | 27 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Height | - | 1.04 mm | - |
| Length | - | 6.15 mm | - |
| Width | - | 5.15 mm | - |
| Part # Aliases | - | SIRA10DP-GE3 | SIRA10DP-GE3 |
| Unit Weight | - | 0.017870 oz | 0.017870 oz |