PartNumber | SIRA12BDP-T1-GE3 | SIRA10DP-T1-GE3 | SIRA10DP-T1-GE3. |
Description | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 60 A | 60 A | - |
Rds On Drain Source Resistance | 4.3 mOhms | 2.8 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.1 V | - |
Vgs Gate Source Voltage | 10 V | 20 V, - 16 V | - |
Qg Gate Charge | 21 nC | 51 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 38 W | 40 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Cut Tape |
Series | SIR | SIR | SIR |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 67 S | 52 S | - |
Fall Time | 10 ns | 10 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 20 ns | 10 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 15 ns | 27 ns | - |
Typical Turn On Delay Time | 10 ns | 10 ns | - |
Height | - | 1.04 mm | - |
Length | - | 6.15 mm | - |
Width | - | 5.15 mm | - |
Part # Aliases | - | SIRA10DP-GE3 | SIRA10DP-GE3 |
Unit Weight | - | 0.017870 oz | 0.017870 oz |