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SIRA14BDP-T1-GE3

SIRA14BDP-T1-GE3
Mfr. #:
SIRA14BDP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds; 20/-16V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SIRA14BDP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIRA14BDP-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
21 A
Rds On - Drain-Source Resistance:
5.38 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.1 V
Vgs - Gate-Source Voltage:
20 V, - 16 V
Qg - Gate Charge:
22 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
65 S
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
5 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
16 ns
Typical Turn-On Delay Time:
10 ns
Tags
SIRA14, SIRA1, SIRA, SIR
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SIRA14BDP-T1-GE3
DISTI # V99:2348_22831166		Vishay IntertechnologiesSIRA14BDP-T1-GE36000
  • 24000:$0.1487
  • 9000:$0.1508
  • 6000:$0.1627
  • 3000:$0.1736
  • 1000:$0.1905
  • 500:$0.2448
  • 100:$0.2978
  • 10:$0.4393
  • 1:$0.5627
SIRA14BDP-T1-GE3
DISTI # SIRA14BDP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CHAN 30-V POWERPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5990In Stock
  • 1000:$0.2055
  • 500:$0.2660
  • 100:$0.3385
  • 10:$0.4530
  • 1:$0.5300
SIRA14BDP-T1-GE3
DISTI # SIRA14BDP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CHAN 30-V POWERPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5990In Stock
  • 1000:$0.2055
  • 500:$0.2660
  • 100:$0.3385
  • 10:$0.4530
  • 1:$0.5300
SIRA14BDP-T1-GE3
DISTI # SIRA14BDP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CHAN 30-V POWERPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.1565
  • 15000:$0.1585
  • 6000:$0.1702
  • 3000:$0.1820
SIRA14BDP-T1-GE3
DISTI # 33609371		Vishay IntertechnologiesSIRA14BDP-T1-GE36000
  • 24000:$0.1487
  • 9000:$0.1508
  • 6000:$0.1627
  • 3000:$0.1736
  • 1000:$0.1905
  • 500:$0.2448
  • 100:$0.2978
  • 45:$0.4393
SIRA14BDP-T1-GE3
DISTI # 99AC9568		Vishay IntertechnologiesMOSFET, N-CH, 64A, 30V, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes50
  • 1000:$0.1930
  • 500:$0.2480
  • 250:$0.2760
  • 100:$0.3030
  • 50:$0.3380
  • 25:$0.3730
  • 10:$0.4080
  • 1:$0.5250
SIRA14BDP-T1-GE3
DISTI # 78-SIRA14BDP-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds,20/-16V Vgs PowerPAK SO-8
RoHS: Compliant		6017
  • 1:$0.5200
  • 10:$0.4040
  • 100:$0.3000
  • 500:$0.2460
  • 1000:$0.1910
  • 3000:$0.1740
  • 6000:$0.1630
  • 9000:$0.1510
  • 24000:$0.1440
SIRA14BDP-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds,20/-16V Vgs PowerPAK SO-8Americas -
    SIRA14BDP-T1-GE3-UVishay IntertechnologiesMOSFET N-CHANNEL 30-V (D-S)Americas -
      SIRA14BDP-T1-GE3
      DISTI # 3019116      		Vishay IntertechnologiesMOSFET, N-CH, 64A, 30V, POWERPAK SO
      RoHS: Compliant      		50
      • 5000:$0.2020
      • 1000:$0.2160
      • 500:$0.2760
      • 250:$0.3180
      • 100:$0.3530
      • 25:$0.5360
      • 5:$0.5640
      SIRA14BDP-T1-GE3
      DISTI # 3019116      		Vishay IntertechnologiesMOSFET, N-CH, 64A, 30V, POWERPAK SO50
      • 500:£0.1810
      • 250:£0.2010
      • 100:£0.2200
      • 25:£0.3170
      • 5:£0.3360
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      Availability
      Stock:
      Available
      On Order:
      1988
      Enter Quantity:
      Current price of SIRA14BDP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.52
      $0.52
      10
      $0.40
      $4.04
      100
      $0.30
      $30.00
      500
      $0.25
      $123.00
      1000
      $0.19
      $191.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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