SIRA10

SIRA10DP-T1-GE3 vs SIRA10DP-T1-GE3. vs SIRA10BDP-T1-GE3

 
PartNumberSIRA10DP-T1-GE3SIRA10DP-T1-GE3.SIRA10BDP-T1-GE3
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK SO-8MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IVMOSFET N-CHAN 30V
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSE--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance2.8 mOhms--
Vgs th Gate Source Threshold Voltage1.1 V--
Vgs Gate Source Voltage20 V, - 16 V--
Qg Gate Charge51 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation40 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelCut Tape-
Height1.04 mm--
Length6.15 mm--
SeriesSIRSIR-
Transistor Type1 N-Channel--
Width5.15 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min52 S--
Fall Time10 ns--
Product TypeMOSFETMOSFET-
Rise Time10 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesSIRA10DP-GE3SIRA10DP-GE3-
Unit Weight0.017870 oz0.017870 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIRA10DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRA10DP-T1-GE3. MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV
Vishay
Vishay
SIRA10BDP-T1-GE3 MOSFET N-CHAN 30V
SIRA10DP-T1-GE3 MOSFET N-CH 30V 60A PPAK SO-8
SIRA10DP New and Original
SIRA10DP-T1-E3 New and Original
Top