SIRA04DP-T1-GE3

SIRA04DP-T1-GE3
Mfr. #:
SIRA04DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SIRA04DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIRA04DP-T1-GE3 DatasheetSIRA04DP-T1-GE3 Datasheet (P4-P6)SIRA04DP-T1-GE3 Datasheet (P7-P9)SIRA04DP-T1-GE3 Datasheet (P10-P12)SIRA04DP-T1-GE3 Datasheet (P13)
ECAD Model:
More Information:
SIRA04DP-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
1.8 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.1 V
Vgs - Gate-Source Voltage:
20 V, - 16 V
Qg - Gate Charge:
77 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
62.5 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Series:
SIR
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
105 S
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
30 ns
Typical Turn-On Delay Time:
12 ns
Part # Aliases:
SIRA04DP-GE3
Unit Weight:
0.017870 oz
Tags
SIRA04, SIRA0, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK SO-8
***ure Electronics
Single N-Channel 30 V 2.15 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8
***et Europe
Trans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R
***ark
N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes
***Components
MOSFET N-CH 30V 35.9A POWERPAK SO8
***an P&S
30V,40A,N-Channel MOSFET
***i-Key
MOSFET N-CH 30V 40A PPAK SO-8
***
N-CHANNEL 30-V (D-S)
***ment14 APAC
MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:27.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SIRA04DP-T1-GE3
DISTI # V36:1790_09216068
Vishay IntertechnologiesTrans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO EP T/R
RoHS: Compliant
0
  • 3000000:$0.5181
  • 1500000:$0.5183
  • 300000:$0.5305
  • 30000:$0.5498
  • 3000:$0.5529
SIRA04DP-T1-GE3
DISTI # SIRA04DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2885In Stock
  • 1000:$0.6165
  • 500:$0.7808
  • 100:$0.9452
  • 10:$1.2120
  • 1:$1.3600
SIRA04DP-T1-GE3
DISTI # SIRA04DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2885In Stock
  • 1000:$0.6165
  • 500:$0.7808
  • 100:$0.9452
  • 10:$1.2120
  • 1:$1.3600
SIRA04DP-T1-GE3
DISTI # SIRA04DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 15000:$0.5107
  • 6000:$0.5307
  • 3000:$0.5586
SIRA04DP-T1-GE3
DISTI # SIRA04DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA04DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 3000
    SIRA04DP-T1-GE3
    DISTI # SIRA04DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R (Alt: SIRA04DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.4489
    • 18000:€0.4689
    • 12000:€0.5309
    • 6000:€0.6549
    • 3000:€0.9129
    SIRA04DP-T1-GE3
    DISTI # SIRA04DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R (Alt: SIRA04DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Asia - 0
      SIRA04DP-T1-GE3
      DISTI # 70243884
      Vishay SiliconixSemiconcuctor,Mosfet,TrenchFET,N-Channel,30V,40A,2.15mohm @ 10V,PowerPAK SO-8
      RoHS: Compliant
      0
      • 3000:$0.5720
      SIRA04DP-T1-GE3
      DISTI # 78-SIRA04DP-T1-GE3
      Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant
      2992
      • 1:$1.3200
      • 10:$1.0900
      • 100:$0.8390
      • 500:$0.7220
      • 1000:$0.5690
      • 3000:$0.5310
      • 6000:$0.5050
      • 9000:$0.4860
      SIRA04DP-T1-GE3Vishay Intertechnologies 3962
        SIRA04DPT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant
        3000
          SIRA04DP-T1-GE3Vishay Intertechnologies30V,40A,N-Channel MOSFET2400
          • 1:$2.4500
          • 100:$0.9800
          • 500:$0.9100
          • 1000:$0.8800
          SIRA04DP-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8Americas -
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            Availability
            Stock:
            Available
            On Order:
            1985
            Enter Quantity:
            Current price of SIRA04DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
            Reference price (USD)
            Quantity
            Unit Price
            Ext. Price
            1
            $1.32
            $1.32
            10
            $1.09
            $10.90
            100
            $0.84
            $83.90
            500
            $0.72
            $361.00
            1000
            $0.57
            $569.00
            Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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