PartNumber | SIRA04DP-T1-GE3 | SIRA04DP-T1-GE3-CUT TAPE | SIRA04DP |
Description | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PowerPAK-SO-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 40 A | - | - |
Rds On Drain Source Resistance | 1.8 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.1 V | - | - |
Vgs Gate Source Voltage | 20 V, - 16 V | - | - |
Qg Gate Charge | 77 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 62.5 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET, PowerPAK | - | - |
Packaging | Reel | - | - |
Series | SIR | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 105 S | - | - |
Fall Time | 8 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 10 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 30 ns | - | - |
Typical Turn On Delay Time | 12 ns | - | - |
Part # Aliases | SIRA04DP-GE3 | - | - |
Unit Weight | 0.017870 oz | - | - |