SIRA00DP-T1

SIRA00DP-T1-GE3 vs SIRA00DP-T1-RE3 vs SIRA00DP-T1-GE3-CUT TAPE

 
PartNumberSIRA00DP-T1-GE3SIRA00DP-T1-RE3SIRA00DP-T1-GE3-CUT TAPE
DescriptionMOSFET 30V 1mOhm@10V 60A N-Ch G-IVMOSFET 30V Vds TrenchFET PowerPAK SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance830 uOhms830 uOhms-
Vgs th Gate Source Threshold Voltage1.1 V1.1 V-
Vgs Gate Source Voltage20 V, - 16 V20 V, - 16 V-
Qg Gate Charge220 nC220 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation104 W104 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
Height1.04 mm--
Length6.15 mm--
SeriesSIRSIR-
Transistor Type1 N-Channel--
Width5.15 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min140 S140 S-
Fall Time11 ns11 ns-
Product TypeMOSFETMOSFET-
Rise Time14 ns14 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time67 ns67 ns-
Typical Turn On Delay Time18 ns18 ns-
Part # AliasesSIRA00DP-GE3--
Unit Weight0.017870 oz0.017870 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIRA00DP-T1-GE3 MOSFET 30V 1mOhm@10V 60A N-Ch G-IV
SIRA00DP-T1-RE3 MOSFET 30V Vds TrenchFET PowerPAK SO-8
SIRA00DP-T1-GE3-CUT TAPE New and Original
Vishay
Vishay
SIRA00DP-T1-GE3 MOSFET N-CH 30V 100A PPAK SO-8
SIRA00DP-T1-RE3 MOSFET N-CH 30V 100A POWERPAKSO
Top