SIRA52

SIRA52DP-T1-GE3 vs SIRA52ADP-T1-RE3 vs SIRA52DP-T1-RE3

 
PartNumberSIRA52DP-T1-GE3SIRA52ADP-T1-RE3SIRA52DP-T1-RE3
DescriptionMOSFET 40V Vds 20V Vgs PowerPAK SO-8MOSFET 40V Vds 20/-16V Vgs PowerPAK SO-8MOSFET 40V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8PowerPAK-SO-8PowerPAK-SO-8
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAKTrenchFET, PowerPAK
PackagingReelReelReel
SeriesSIRSIRSIR
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity300030006000
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.002610 oz-0.017870 oz
Number of Channels-1 Channel1 Channel
Transistor Polarity-N-ChannelN-Channel
Vds Drain Source Breakdown Voltage-40 V40 V
Id Continuous Drain Current-131 A60 A
Rds On Drain Source Resistance-1.63 mOhms2.3 mOhms
Vgs th Gate Source Threshold Voltage-1.1 V1.1 V
Vgs Gate Source Voltage-20 V, - 16 V20 V, - 16 V
Qg Gate Charge-100 nC97.5 nC
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Pd Power Dissipation-48 W48 W
Configuration-SingleSingle
Channel Mode-EnhancementEnhancement
Forward Transconductance Min-98 S-
Fall Time-6 ns-
Rise Time-6 ns-
Typical Turn Off Delay Time-38 ns-
Typical Turn On Delay Time-17 ns-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIRA52DP-T1-GE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
SIRA52ADP-T1-RE3 MOSFET 40V Vds 20/-16V Vgs PowerPAK SO-8
SIRA52DP-T1-RE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
Vishay
Vishay
SIRA52ADP-T1-RE3 MOSFET N-CHAN 40V PPAK SO-8
SIRA52DP-T1-GE3 MOSFET N-CH 40V 60A PPAK SO-8
SIRA52DP-T1-RE3 MOSFET N-CH 40V 60A POWERPAKSO-8
SIRA52DPT1GE3 Power Field-Effect Transisto
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