 |  |  | |
| PartNumber | SIRA58ADP-T1-RE3 | SIRA58DP | SIRA58DP-T1-GE3 |
| Description | MOSFET 40V Vds 20/-16V Vgs PowerPAK SO-8 | MOSFET N-CH 40V 60A PPAK SO-8 | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 109 A | - | - |
| Rds On Drain Source Resistance | 2.65 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - | - |
| Vgs Gate Source Voltage | 20 V, - 16 V | - | - |
| Qg Gate Charge | 61 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 56.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Series | SIR | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 80 S | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIRA58ADP-T1-RE3 | MOSFET 40V Vds 20/-16V Vgs PowerPAK SO-8 | |
Vishay |
SIRA58ADP-T1-RE3 | MOSFET N-CH 40V | |
| SIRA58DP-T1-GE3 | MOSFET N-CH 40V 60A PPAK SO-8 | ||
| SIRA58DP | New and Original |