SIRA8

SIRA80DP-T1-RE3 vs SIRA84BDP-T1-GE3 vs SIRA88BDP-T1-GE3

 
PartNumberSIRA80DP-T1-RE3SIRA84BDP-T1-GE3SIRA88BDP-T1-GE3
DescriptionMOSFET 30V Vds 20/-16V Vgs PowerPAK SO-8MOSFET N-Channel 30 V (D-S) MOSFETMOSFET N-Channel 30 V (D-S) MOSFET
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8PowerPAK-SO-8PowerPAK SO-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current100 A70 A40 A
Rds On Drain Source Resistance470 uOhms7.1 mOhms5.5 mOhms
Vgs th Gate Source Threshold Voltage2.2 V1.2 V- 4.4 V
Vgs Gate Source Voltage20 V, - 16 V- 16 V, 20 V- 16 V, + 20 V
Qg Gate Charge125 nC20.7 nC12.2 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation104 W36 W-
ConfigurationSingleSingle-
TradenameTrenchFET, PowerPAKTrenchFETTrenchFET
PackagingReelReelReel
SeriesSIR--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time12 ns5 ns5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time23 ns5 ns5 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time41 ns20 ns15 ns
Typical Turn On Delay Time17 ns10 ns8 ns
Channel Mode-EnhancementEnhancement
Transistor Type-1 N-Channel-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIRA80DP-T1-RE3 MOSFET 30V Vds 20/-16V Vgs PowerPAK SO-8
SIRA84BDP-T1-GE3 MOSFET N-Channel 30 V (D-S) MOSFET
SIRA88BDP-T1-GE3 MOSFET N-Channel 30 V (D-S) MOSFET
SIRA88DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Vishay
Vishay
SIRA80DP-T1-RE3 MOSFET N-CHAN 30V POWERPAK SO-8
SIRA84DP-T1-GE3 MOSFET N-CH 30V 60A POWERPAKSO-8
SIRA88DP-T1-GE3 MOSFET N-CH 30V 45.5A POWERPAKSO
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