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SISC

SISC06DN-T1-GE3 vs SISC050N10DX1SA1 vs SISC097N24DX1SA1

 
PartNumberSISC06DN-T1-GE3SISC050N10DX1SA1SISC097N24DX1SA1
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK 1212-8MOSFET N-CHAN SAWED WAFERTRANSISTOR P-CH BARE DIE
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance4 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge38.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation46.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
SeriesSIS--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Fall Time14 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time12 ns--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix 		SISC06DN-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Infineon Technologies
Infineon Technologies 		SISC185N06LX1SA1 MOSFET SMALL SIGNAL+P-CH
SISC262SN06LX1SA1 MOSFET SMALL SIGNAL+P-CH
Infineon Technologies
Infineon Technologies 		SISC185N06LX1SA1 TRANSISTOR P-CH BARE DIE
SISC262SN06LX1SA1 TRANSISTOR P-CH BARE DIE
SISC624P06X3MA1 SMALL SIGNAL+P-CH
SISC050N10DX1SA1 MOSFET N-CHAN SAWED WAFER
SISC097N24DX1SA1 TRANSISTOR P-CH BARE DIE
SISC29N20DX1SA1 TRANSISTOR P-CH BARE DIE
Vishay
Vishay 		SISC06DN-T1-GE3 MOSFET N-CH 30V
SISC04DN-T1-E3 New and Original
SISCDRH127M-101RT New and Original
SISCDRH127M-150T New and Original
SISCDRH127M150T New and Original
SISCDRH127M270T New and Original
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