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SISC06DN-T1-GE3

SISC06DN-T1-GE3
Mfr. #:
SISC06DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Lifecycle:
New from this manufacturer.
Datasheet:
SISC06DN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISC06DN-T1-GE3 DatasheetSISC06DN-T1-GE3 Datasheet (P4-P6)SISC06DN-T1-GE3 Datasheet (P7)
ECAD Model:
More Information:
SISC06DN-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-1212-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
4 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
4.5 V
Qg - Gate Charge:
38.5 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
46.3 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Series:
SIS
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Fall Time:
14 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
23 ns
Typical Turn-On Delay Time:
12 ns
Tags
SISC0, SISC, SIS
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Part # Mfg. Description Stock Price
SISC06DN-T1-GE3
DISTI # SISC06DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 6000:$0.3780
  • 3000:$0.3969
SISC06DN-T1-GE3
DISTI # SISC06DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6000In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SISC06DN-T1-GE3
DISTI # SISC06DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6000In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SISC06DN-T1-GE3
DISTI # 59AC7448		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
  • 10000:$0.3430
  • 6000:$0.3510
  • 4000:$0.3650
  • 2000:$0.4050
  • 1000:$0.4460
  • 1:$0.4650
SISC06DN-T1-GE3
DISTI # 81AC2793		Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 46.3W,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes6050
  • 500:$0.5190
  • 250:$0.5610
  • 100:$0.6030
  • 50:$0.6640
  • 25:$0.7250
  • 10:$0.7860
  • 1:$0.9490
SISC06DN-T1-GE3
DISTI # 78-SISC06DN-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant		5990
  • 1:$0.9400
  • 10:$0.7780
  • 100:$0.5970
  • 500:$0.5140
  • 1000:$0.4050
  • 3000:$0.3780
  • 6000:$0.3600
  • 9000:$0.3460
SISC06DN-T1-GE3
DISTI # 1783694		Vishay IntertechnologiesN-CHANEL 40 V (D-S) MOSFET POWERPAK 1212, RL5950
  • 3000:£0.2800
SISC06DN-T1-GE3
DISTI # 2932957		Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 46.3W6050
  • 500:£0.3760
  • 250:£0.4060
  • 100:£0.4360
  • 25:£0.5700
  • 5:£0.6370
SISC06DN-T1-GE3
DISTI # 2932957		Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 46.3W
RoHS: Compliant		6050
  • 1000:$0.6150
  • 500:$0.6490
  • 250:$0.7650
  • 100:$0.9270
  • 10:$1.1900
  • 1:$1.4400
Image Part # Description
OQ1632500000G

Mfr.#: OQ1632500000G

OMO.#: OMO-OQ1632500000G

 Pluggable Terminal Blocks 381 TB SKT VERTICAL
Availability
Stock:
Available
On Order:
1988
Enter Quantity:
Current price of SISC06DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.94
$0.94
10
$0.78
$7.78
100
$0.60
$59.70
500
$0.51
$257.00
1000
$0.40
$405.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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