 | | | |
| PartNumber | SPD08P06PGXT | SPD09P06PLGBTMA1 | SPD09P06PL |
| Description | MOSFET P-Ch -60V -8.8A DPAK-2 | MOSFET P-Ch -60V 9.7A DPAK-2 | MOSFET P-Ch -60V -9.7A DPAK-2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 8.83 A | 9.7 A | 9.7 A |
| Rds On Drain Source Resistance | 230 mOhms | 200 mOhms | 400 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | - 13 nC | 21 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 42 W | 42 W | 42 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 2.5 S | 1.8 S | - |
| Fall Time | 14 ns | 89 ns | 89 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 46 ns | 168 ns | 168 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 48 ns | 49 ns | 49 ns |
| Typical Turn On Delay Time | 16 ns | 11 ns | 11 ns |
| Part # Aliases | G SP000450534 SPD08P06P SPD08P06PGBTMA1 | G SP000443928 SPD09P06PL SPD9P6PLGXT | - |
| Unit Weight | 0.011993 oz | 0.139332 oz | 0.139332 oz |
| RoHS | - | Y | Y |
| Series | - | XPD09P06 | - |
| Moisture Sensitive | - | - | Yes |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD08P06PGXT | MOSFET P-Ch -60V -8.8A DPAK-2 | |
| SPD09P06PLGBTMA1 | MOSFET P-Ch -60V 9.7A DPAK-2 | ||
| SPD09P06PL | MOSFET P-CH 60V 9.7A DPAK | ||
| SPD09P06PLGBTMA1 | MOSFET P-CH 60V 9.7A TO252-3 | ||
Infineon Technologies |
SPD09P06PL | MOSFET P-Ch -60V -9.7A DPAK-2 | |
| SPD09P06PLGBT | New and Original | ||
| SPD08PO6P | New and Original | ||
| SPD09N05 | 9.2 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | ||
| SPD09N05L | New and Original | ||
| SPD09N50 | New and Original | ||
| SPD09P06PL G | MOSFET P-Ch -60V 9.7A DPAK-2 | ||
| SPD09P06PLG | POWER FIELD-EFFECT TRANSISTOR, 9.7A I(D), 60V, 0.25OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AB | ||
| SPD09PPL | New and Original |