SPD09P06PLGBTMA1

Mfr. #:: SPD09P06PLGBTMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET P-Ch -60V 9.7A DPAK-2
Lifecycle:: New from this manufacturer.
Datasheet:: SPD09P06PLGBTMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 9.7 A

Rds On - Drain-Source Resistance:: 200 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 21 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 42 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Series:: XPD09P06

Transistor Type:: 1 P-Channel

Width:: 6.22 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 1.8 S

Fall Time:: 89 ns

Product Type:: MOSFET

Rise Time:: 168 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 49 ns

Typical Turn-On Delay Time:: 11 ns

Part # Aliases:: G SP000443928 SPD09P06PL SPD9P6PLGXT

Unit Weight:: 0.139332 oz

Tags: SPD09P06PLG, SPD09P0, SPD09P, SPD09, SPD0, SPD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPD09P06PLGBTMA1 Description

***ure Electronics: Single P-Channel 60 V 250 mOhm 14 nC SIPMOS® Power Mosfet - DPAK

***ment14 APAC: MOSFET, P-CH, -60V, -9.7A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.7A; Source Voltage Vds:-60V; On Resistance

***nell: MOSFET, P-CH, -60V, -9.7A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.7A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 42W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***icroelectronics: N-Channel 60V - 0.08Ohm - 12A - DPAK StripFET(TM) II POWER MOSFET

***ure Electronics: N-Channel 60 V 0.1 Ohm Surface Mount STripFET II Power MosFet - TO-252-3

***ark: MOSFET, N CH, 60V, 12A, TO-252, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 12A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***emi: P-Channel PowerTrench® MOSFET, 60V, -15A, 100mΩ

***ure Electronics: P-Channel 60 V 100 mOhm Surface Mount PowerTrench Mosfet TO-252-3

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.

***ark: MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-15A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-1.6V ;RoHS Compliant: Yes

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -15 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 130 / Gate-Source Voltage V = 20 / Fall Time ns = 22 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.6

*** Electronics: N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11

***ure Electronics: N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3

***ark: MOSFET, N CHANNEL, 30V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: P-Channel owerTrench® MOSFET, -40V, -14A, 44mΩ

*** Source Electronics: Trans MOSFET P-CH Si 40V 6.7A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 6.7A DPAK

***ure Electronics: P-Channel 40 V 44 mOhm Surface Mount PowerTrench Mosfet TO-252-3

***sible Micro: XTR,PWR,MFT,FDD4243,DPK -40V,-14A,40mOHM,P-CHNL POWER MOSFET,D-PAK PKG

***roFlash: Power Field-Effect Transistor, 6.7A I(D), 40V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-40V; Continuous Drain Current, Id:-6.7A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-1.6V ;RoHS Compliant: Yes

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -14 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 42

***emi: P-Channel PowerTrench® MOSFET, 30V, -40A, 20mΩ

***ure Electronics: P-Channel 30 V 20 mOhm Surface Mount PowerTrench Mosfet TO-252-3

*** Stop Electro: Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, P, SMD, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.8W; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-40A; Package / Case:DPAK; Power Dissipation Pd:3.8W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.8V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -40 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 20 / Gate-Source Voltage V = 25 / Fall Time ns = 21 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 52

***icroelectronics: N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package

***ure Electronics: N-Channel 200 V 0.4 Ohm 45 W Surface Mount MESH Overlay Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N CH, 200V, 7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Market price

Part #	Mfg.	Description	Stock	Price
SPD09P06PLGBTMA1 DISTI # V72:2272_06390894	Infineon Technologies AG	Trans MOSFET P-CH 60V 9.7A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	62	75000:$0.2801 30000:$0.2814 15000:$0.2829 6000:$0.2974 3000:$0.3032 1000:$0.3492 500:$0.3653 250:$0.4024 100:$0.4471 50:$0.5582 25:$0.6203 10:$0.7581 1:$0.9090
SPD09P06PLGBTMA1 DISTI # SPD09P06PLGBTMA1CT-ND	Infineon Technologies AG	MOSFET P-CH 60V 9.7A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	28439In Stock	1000:$0.3893 500:$0.4867 100:$0.6156 10:$0.8030 1:$0.9100
SPD09P06PLGBTMA1 DISTI # SPD09P06PLGBTMA1DKR-ND	Infineon Technologies AG	MOSFET P-CH 60V 9.7A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	28439In Stock	1000:$0.3893 500:$0.4867 100:$0.6156 10:$0.8030 1:$0.9100
SPD09P06PLGBTMA1 DISTI # SPD09P06PLGBTMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 60V 9.7A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	25000In Stock	25000:$0.2993 12500:$0.3071 5000:$0.3189 2500:$0.3426
SPD09P06PLGBTMA1 DISTI # 33960881	Infineon Technologies AG	Trans MOSFET P-CH 60V 9.7A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1741	126:$0.6154
SPD09P06PLGBTMA1 DISTI # 32728777	Infineon Technologies AG	Trans MOSFET P-CH 60V 9.7A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	62	28:$0.9090
SPD09P06PLGBTMA1 DISTI # SP000443928	Infineon Technologies AG	Trans MOSFET P-CH 60V 9.7A 3-Pin TO-252 T/R (Alt: SP000443928) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2279 15000:€0.2449 10000:€0.2659 5000:€0.2899 2500:€0.3539
SPD09P06PLGBTMA1 DISTI # 50Y7848	Infineon Technologies AG	Trans MOSFET P-CH 60V 9.7A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 50Y7848) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0
SPD09P06PLGXT DISTI # SPD09P06PLGBTMA1	Infineon Technologies AG	Trans MOSFET P-CH 60V 9.7A 3-Pin(2+Tab) TO-252 T/R - Tape and Reel (Alt: SPD09P06PLGBTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2279 15000:$0.2319 10000:$0.2399 5000:$0.2499 2500:$0.2589
SPD09P06PLGBTMA1 DISTI # 50Y7848	Infineon Technologies AG	MOSFET, P-CH, -60V, -9.7A, 175DEG C, 42W,Transistor Polarity:P Channel,Continuous Drain Current Id:-9.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.2ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V RoHS Compliant: Yes	1741	1000:$0.3640 500:$0.3940 250:$0.4240 100:$0.4550 50:$0.5380 25:$0.6210 10:$0.7050 1:$0.8480
SPD09P06PL G DISTI # 726-SPD09P06PLG	Infineon Technologies AG	MOSFET P-Ch -60V 9.7A DPAK-2 RoHS: Compliant	4044	1:$0.8400 10:$0.6980 100:$0.4500 1000:$0.3600 2500:$0.3040 10000:$0.2930 25000:$0.2820
SPD09P06PLGBTMA1 DISTI # 726-SPD09P06PLGBTMA1	Infineon Technologies AG	MOSFET P-Ch -60V 9.7A DPAK-2 RoHS: Compliant	2564	1:$0.8400 10:$0.6980 100:$0.4500 1000:$0.3600 2500:$0.3040 10000:$0.2930 25000:$0.2820
SPD09P06PLGBTMA1	Infineon Technologies AG		952
SPD09P06PLGBTMA1 DISTI # 8269074P	Infineon Technologies AG	MOSFET P-CH 9.7A 60V SIPMOS TO252, RL	2500	2500:£0.2810 1000:£0.2970 250:£0.3700
SPD09P06PLGBTMA1 DISTI # SPD09P06PLGBTMA1	Infineon Technologies AG	Transistor: P-MOSFET,unipolar,-60V,-9.7A,42W,PG-TO252-3	1218	100:$0.3300 10:$0.3700 3:$0.4700 1:$0.6100
SPD09P06PLGBTMA1 DISTI # 2480880	Infineon Technologies AG	MOSFET, P-CH, -60V, -9.7A, TO-252-3	2540	500:£0.2750 250:£0.3120 100:£0.3500 10:£0.5970 1:£0.7480
SPD09P06PLGBTMA1 DISTI # 2480880RL	Infineon Technologies AG	MOSFET, P-CH, -60V, -9.7A, TO-252-3 RoHS: Compliant	0	1000:$0.5430 100:$0.6780 10:$1.0500 1:$1.2700
SPD09P06PLGBTMA1 DISTI # 2480880	Infineon Technologies AG	MOSFET, P-CH, -60V, -9.7A, TO-252-3 RoHS: Compliant	2505	1000:$0.5430 100:$0.6780 10:$1.0500 1:$1.2700

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SPD09P06PLGBTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes