SPD09P0 stock, SPD09P0, SPD09P06PLGBTMA1


PartNumber	SPD09P06PLGBTMA1	SPD09P06PL
Description	MOSFET P-Ch -60V 9.7A DPAK-2	MOSFET P-Ch -60V -9.7A DPAK-2
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TO-252-3	TO-252-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	P-Channel	P-Channel
Vds Drain Source Breakdown Voltage	60 V	60 V
Id Continuous Drain Current	9.7 A	9.7 A
Rds On Drain Source Resistance	200 mOhms	400 mOhms
Vgs th Gate Source Threshold Voltage	2 V	-
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	21 nC	-
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	42 W	42 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Packaging	Reel	Reel
Height	2.3 mm	2.3 mm
Length	6.5 mm	6.5 mm
Series	XPD09P06	-
Transistor Type	1 P-Channel	1 P-Channel
Width	6.22 mm	6.22 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	1.8 S	-
Fall Time	89 ns	89 ns
Product Type	MOSFET	MOSFET
Rise Time	168 ns	168 ns
Factory Pack Quantity	2500	2500
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	49 ns	49 ns
Typical Turn On Delay Time	11 ns	11 ns
Part # Aliases	G SP000443928 SPD09P06PL SPD9P6PLGXT	-
Unit Weight	0.139332 oz	0.139332 oz
Moisture Sensitive	-	Yes

Search Part Number : "SPD09P0", Match & Start with "SPD09P0" - Total : 7

Manufacturer	Part #	Description
Infineon Technologies	SPD09P06PLGBTMA1	MOSFET P-Ch -60V 9.7A DPAK-2
	SPD09P06PL	MOSFET P-CH 60V 9.7A DPAK
	SPD09P06PLGBTMA1	MOSFET P-CH 60V 9.7A TO252-3
Infineon Technologies	SPD09P06PL	MOSFET P-Ch -60V -9.7A DPAK-2
	SPD09P06PLGBT	New and Original
	SPD09P06PL G	MOSFET P-Ch -60V 9.7A DPAK-2
	SPD09P06PLG	POWER FIELD-EFFECT TRANSISTOR, 9.7A I(D), 60V, 0.25OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AB

SPD09P0