PartNumber | SQ1922AEEH-T1_GE3 | SQ1912EH-T1_GE3 | SQ1902AEL-T1_GE3 |
Description | MOSFET Dual Nch 20V Vds SOT-363 | MOSFET 20V Vds 0.8A Id AEC-Q101 Qualified | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-363-6 | SOT-363-6 | SOT-363-6 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
Id Continuous Drain Current | 0.85 A | 800 mA | 780 mA |
Rds On Drain Source Resistance | 300 mOhms | 200 mOhms, 200 mOhms | 200 mOhms |
Vgs th Gate Source Threshold Voltage | 1.5 V | 450 mV | 600 mV |
Vgs Gate Source Voltage | 12 V | 12 V | 12 V |
Qg Gate Charge | 1.2 nC | 1.15 nC, 1.15 nC | 1.2 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 1.5 W | 1.5 W | 430 mW |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SQ | SQ | SQ |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 6 ns | 17 ns, 17 ns | 18 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 9.6 ns | 21 ns, 21 ns | 22 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 8 ns | 19 ns, 19 ns | 20 ns |
Typical Turn On Delay Time | 10 ns | 3 ns, 3 ns | 10 ns |
Qualification | - | AEC-Q101 | AEC-Q101 |
Forward Transconductance Min | - | 2.6 S, 2.6 S | 1.1 S |
Unit Weight | - | 0.000265 oz | 0.000265 oz |