SQ1922AEEH-T1_GE3

SQ1922AEEH-T1_GE3
Mfr. #:
SQ1922AEEH-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET Dual Nch 20V Vds SOT-363
Lifecycle:
New from this manufacturer.
Datasheet:
SQ1922AEEH-T1_GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
SQ1922AEEH-T1_GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-363-6
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
0.85 A
Rds On - Drain-Source Resistance:
300 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
12 V
Qg - Gate Charge:
1.2 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
1.5 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Series:
SQ
Transistor Type:
2 N-Channel
Brand:
Vishay / Siliconix
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
9.6 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
8 ns
Typical Turn-On Delay Time:
10 ns
Tags
SQ1922, SQ192, SQ19, SQ1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Image Part # Description
SQ1922AEEH-T1_GE3

Mfr.#: SQ1922AEEH-T1_GE3

OMO.#: OMO-SQ1922AEEH-T1-GE3

MOSFET Dual Nch 20V Vds SOT-363
Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of SQ1922AEEH-T1_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.53
$0.53
10
$0.37
$3.66
100
$0.25
$24.70
500
$0.20
$99.00
1000
$0.15
$149.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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