 |  | | |
| PartNumber | SQ1902AEL-T1_GE3 | SQ1902AEL-T1-GE3 | SQ1902EL-T1-GE3 |
| Description | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 780 mA | - | - |
| Rds On Drain Source Resistance | 200 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 1.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 430 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SQ | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 1.1 S | - | - |
| Fall Time | 18 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | 0.000265 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ1902AEL-T1_GE3 | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | |
| SQ1902AEL-T1-GE3 | New and Original | ||
| SQ1902EL-T1-GE3 | New and Original | ||
| SQ1905EL-T1-GE3 | New and Original |