 |  | | |
| PartNumber | SQ1912EH-T1_GE3 | SQ1912EEH | SQ1912EEH-T1-GE3 |
| Description | MOSFET 20V Vds 0.8A Id AEC-Q101 Qualified | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 800 mA | - | - |
| Rds On Drain Source Resistance | 200 mOhms, 200 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 1.15 nC, 1.15 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SQ | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 2.6 S, 2.6 S | - | - |
| Fall Time | 17 ns, 17 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 21 ns, 21 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 19 ns, 19 ns | - | - |
| Typical Turn On Delay Time | 3 ns, 3 ns | - | - |
| Unit Weight | 0.000265 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ1912EH-T1_GE3 | MOSFET 20V Vds 0.8A Id AEC-Q101 Qualified | |
| SQ1912EEH | New and Original | ||
| SQ1912EEH-T1-GE3 | New and Original | ||
Vishay |
SQ1912EH-T1_GE3 | MOSFET 2 N-CH 20V 800MA SC70-6 |