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| PartNumber | SQ2310ES-T1_GE3 | SQ2310ES-T1-GE3 | SQ2310ES-TI-GE3 |
| Description | MOSFET 20V 6A 2W AEC-Q101 Qualified | Trans MOSFET N-CH 20V 6A Automotive 3-Pin SOT-23 T/R | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-236-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Rds On Drain Source Resistance | 24 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 8.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 27 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.050717 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ2310ES-T1_GE3 | MOSFET 20V 6A 2W AEC-Q101 Qualified | |
| SQ2310ES-T1-GE3 | Trans MOSFET N-CH 20V 6A Automotive 3-Pin SOT-23 T/R | ||
| SQ2310ES-TI-GE3 | New and Original | ||
Vishay |
SQ2310ES-T1_GE3 | MOSFET N-CH 20V 6A SOT23 |