 |  | | |
| PartNumber | SQ2319ADS-T1_GE3 | SQ2319ADS-T1 GE3 | SQ2319AES-T1-E3 |
| Description | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 4.6 A | - | - |
| Rds On Drain Source Resistance | 75 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 10.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.45 mm | - | - |
| Length | 2.9 mm | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.6 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 8 S | - | - |
| Fall Time | 17 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 17 ns | - | - |
| Typical Turn On Delay Time | 4 ns | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ2319ADS-T1_GE3 | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | |
| SQ2319ADS-T1 GE3 | New and Original | ||
| SQ2319AES-T1-E3 | New and Original | ||
Vishay |
SQ2319ADS-T1_GE3 | MOSFET P-CH 40V 4.6A SOT23-3 |