SQ233

SQ2337ES-T1_GE3 vs SQ2337ES-T1-GE3 vs SQ2337ES

 
PartNumberSQ2337ES-T1_GE3SQ2337ES-T1-GE3SQ2337ES
DescriptionMOSFET P-Channel 80V AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQ2337ES-T1_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current2.2 A--
Rds On Drain Source Resistance290 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge11.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.45 mm--
Length2.9 mm--
SeriesSQSQ-
Transistor Type1 P-Channel--
Width1.6 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min3.5 S--
Fall Time8 ns--
Product TypeMOSFETMOSFET-
Rise Time10 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time5 ns--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ2337ES-T1_GE3 MOSFET P-Channel 80V AEC-Q101 Qualified
SQ2337ES-T1-GE3 MOSFET RECOMMENDED ALT 78-SQ2337ES-T1_GE3
SQ2337ES-T1-GE3 IGBT Transistors MOSFET P-Channel 80V Automotive MOSFET
SQ2337ES New and Original
Vishay
Vishay
SQ2337ES-T1_GE3 MOSFET P-CHAN 80V SOT23
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