PartNumber | SQ9945BE | SQ9945BEY | SQ9945BEY-T1-E3 |
Description | |||
Manufacturer | VISHAY | - | - |
Product Category | FETs - Arrays | - | - |
Series | TrenchFETR | - | - |
Packaging | Digi-ReelR Alternate Packaging | - | - |
Unit Weight | 0.017870 oz | - | - |
Mounting Style | SMD/SMT | - | - |
Tradename | TrenchFET | - | - |
Package Case | 8-SOIC (0.154", 3.90mm Width) | - | - |
Technology | Si | - | - |
Operating Temperature | -55°C ~ 175°C (TJ) | - | - |
Mounting Type | Surface Mount | - | - |
Supplier Device Package | 8-SO | - | - |
Configuration | Dual | - | - |
FET Type | 2 N-Channel (Dual) | - | - |
Power Max | 4W | - | - |
Drain to Source Voltage Vdss | 60V | - | - |
Input Capacitance Ciss Vds | 470pF @ 25V | - | - |
FET Feature | Logic Level Gate | - | - |
Current Continuous Drain Id 25°C | 5.4A | - | - |
Rds On Max Id Vgs | 64 mOhm @ 3.4A, 10V | - | - |
Vgs th Max Id | 2.5V @ 250μA | - | - |
Gate Charge Qg Vgs | 12nC @ 10V | - | - |
Pd Power Dissipation | 4 W | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 1.7 ns | - | - |
Rise Time | 2.8 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 5.4 A | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Rds On Drain Source Resistance | 64 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 17 nS | - | - |
Qg Gate Charge | 8 nC | - | - |